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Nano Research 2017, 10(1): 77-86 https://doi.org/10.1007/s12274-016-1267-7
Research Article | Issue | Published: 20 October 2016

Effect of carrier screening on ZnO-based resistive switching memory devices

Show Author's Information Yihui Sun1,  Xiaoqin Yan1( ),  Xin Zheng1,  Yong Li1,  Yichong Liu1,  Yanwei Shen1,  Yi Ding1,  Yue Zhang1,2( )
State Key Laboratory for Advanced Metals and Materials,School of Materials Science and Engineering, University of Science and Technology Beijing,Beijing,100083,China;
Beijing Municipal Key Laboratory of New Energy Materials and Technologies,University of Science and Technology Beijing,Beijing,100083,China;
Keywords:
annealing, resistive switch, carrier concentration, potential gradient, carrier screening effect
Cite this article:
Sun Y, Yan X, Zheng X, et al. Effect of carrier screening on ZnO-based resistive switching memory devices. Nano Research, 2017, 10(1): 77-86. https://doi.org/10.1007/s12274-016-1267-7
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Abstract Full text Electronic supplementary material About this article

The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory (RRAM) devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching (RS), which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 105 at an annealing temperature of 600 ℃, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.


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Electronic supplementary material
About this article

Effect of carrier screening on ZnO-based resistive switching memory devices

Show Author's information Yihui Sun1, Xiaoqin Yan1( ), Xin Zheng1, Yong Li1, Yichong Liu1, Yanwei Shen1, Yi Ding1, Yue Zhang1,2( )
State Key Laboratory for Advanced Metals and Materials,School of Materials Science and Engineering, University of Science and Technology Beijing,Beijing,100083,China;
Beijing Municipal Key Laboratory of New Energy Materials and Technologies,University of Science and Technology Beijing,Beijing,100083,China;

Abstract

The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory (RRAM) devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching (RS), which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 105 at an annealing temperature of 600 ℃, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.

Keywords: annealing, resistive switch, carrier concentration, potential gradient, carrier screening effect

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Publication history
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Acknowledgements

Publication history

Received: 06 July 2016
Revised: 21 August 2016
Accepted: 26 August 2016
Published: 20 October 2016
Issue date: January 2017

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Acknowledgements

Acknowledgements

This work was supported by the National Basic Research Program of China (No. 2013CB932602), the Program of Introducing Talents of Discipline to Universities (No. B14003), National Natural Science Foundation of China (Nos. 51527802, 51372023, and 51232001), Beijing Municipal Science & Technology Commission, the Fundamental Research Funds for Central Universities.

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