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Research Article

Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers

Mei Zhao1,§Wenting Zhang1,2,§Manman Liu1Chao Zou1Keqin Yang1Yun Yang1Youqing Dong1Lijie Zhang1( )Shaoming Huang1( )
College of Chemistry and Materials EngineeringWenzhou UniversityZhejiang Key Laboratory of Carbon MaterialsWenzhou325035China
Key Laboratory of Strongly-Coupled Quantum Matter PhysicsChinese Academy of SciencesSchool of Physical SciencesUniversity of Science and Technology of ChinaHefei230026China

§ These authors contributed equally to this work.

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Abstract

In-plane symmetry is an important contributor to the physical properties of two-dimensional layered materials, as well as atomically thin heterojunctions. Here, we demonstrate anisotropic/isotropic van der Waals (vdW) heterostructures of ReS2 and MoS2 monolayers, where interlayer coupling interactions and charge separation were observed by in situ Raman-photoluminescence spectroscopy, electrical, and photoelectrical measurements. We believe that these results could be helpful for understanding the fundamental physics of atomically thin vdW heterostructures and creating novel electronic and optoelectronic devices.

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Nano Research
Pages 3772-3780

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Cite this article:
Zhao M, Zhang W, Liu M, et al. Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers. Nano Research, 2016, 9(12): 3772-3780. https://doi.org/10.1007/s12274-016-1247-y

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Received: 21 May 2016
Revised: 28 July 2016
Accepted: 05 August 2016
Published: 13 September 2016
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016