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Nano Research 2016, 9(12): 3772-3780 https://doi.org/10.1007/s12274-016-1247-y
Research Article | Issue | Published: 13 September 2016

Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers

Show Author's Information Mei Zhao1,§,  Wenting Zhang1,2,§,  Manman Liu1,  Chao Zou1,  Keqin Yang1,  Yun Yang1,  Youqing Dong1,  Lijie Zhang1( ),  Shaoming Huang1( )
College of Chemistry and Materials EngineeringWenzhou UniversityZhejiang Key Laboratory of Carbon MaterialsWenzhou325035China
Key Laboratory of Strongly-Coupled Quantum Matter PhysicsChinese Academy of SciencesSchool of Physical SciencesUniversity of Science and Technology of ChinaHefei230026China

§ These authors contributed equally to this work.

Keywords:
optoelectronics, van der Waals heterostructures, ReS2/MoS2 monolayers, interlayer coupling interactions
Cite this article:
Zhao M, Zhang W, Liu M, et al. Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers. Nano Research, 2016, 9(12): 3772-3780. https://doi.org/10.1007/s12274-016-1247-y
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Abstract Full text Electronic supplementary material About this article

In-plane symmetry is an important contributor to the physical properties of two-dimensional layered materials, as well as atomically thin heterojunctions. Here, we demonstrate anisotropic/isotropic van der Waals (vdW) heterostructures of ReS2 and MoS2 monolayers, where interlayer coupling interactions and charge separation were observed by in situ Raman-photoluminescence spectroscopy, electrical, and photoelectrical measurements. We believe that these results could be helpful for understanding the fundamental physics of atomically thin vdW heterostructures and creating novel electronic and optoelectronic devices.


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About this article

Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers

Show Author's information Mei Zhao1,§, Wenting Zhang1,2,§, Manman Liu1, Chao Zou1, Keqin Yang1, Yun Yang1, Youqing Dong1, Lijie Zhang1( ), Shaoming Huang1( )
College of Chemistry and Materials EngineeringWenzhou UniversityZhejiang Key Laboratory of Carbon MaterialsWenzhou325035China
Key Laboratory of Strongly-Coupled Quantum Matter PhysicsChinese Academy of SciencesSchool of Physical SciencesUniversity of Science and Technology of ChinaHefei230026China

§ These authors contributed equally to this work.

Abstract

In-plane symmetry is an important contributor to the physical properties of two-dimensional layered materials, as well as atomically thin heterojunctions. Here, we demonstrate anisotropic/isotropic van der Waals (vdW) heterostructures of ReS2 and MoS2 monolayers, where interlayer coupling interactions and charge separation were observed by in situ Raman-photoluminescence spectroscopy, electrical, and photoelectrical measurements. We believe that these results could be helpful for understanding the fundamental physics of atomically thin vdW heterostructures and creating novel electronic and optoelectronic devices.

Keywords: optoelectronics, van der Waals heterostructures, ReS2/MoS2 monolayers, interlayer coupling interactions

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Publication history
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Acknowledgements

Publication history

Received: 21 May 2016
Revised: 28 July 2016
Accepted: 05 August 2016
Published: 13 September 2016
Issue date: December 2016

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 61471270, 51420105002, and 51572199).

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