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Research Article

Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride

Yiming Zhu1,2, Xinsheng Wang2, Mei Zhang2, Congzhong Cai1( ), Liming Xie2( )
State Key Laboratory of Coal Mine Disaster Dynamics and ControlDepartment of Applied PhysicsChongqing UniversityChongqing400044China
CAS Key Laboratory of Standardization and Measurement for NanotechnologyCAS Center for Excellence in NanoscienceNational Center for Nanoscience and TechnologyBeijing100190China
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Abstract

Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride (h-BN) by chemical vapor deposition. Hysteresis-free gate sweeping, metalinsulator transition, and T–γ (γ ~ 0.82–1.26) temperature dependent mobility were observed in the ZrS2 films.

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Keywords

chemical vapor depositiontwo-dimensional materialsZrS2electrical transportmobility

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Nano Research
Volume 9 Issue 10,
October 2016
Pages 2931-2937
DOI: 10.1007/s12274-016-1178-7

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Cite this article:
Zhu Y, Wang X, Zhang M, et al. Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride. Nano Research, 2016, 9(10): 2931-2937. https://doi.org/10.1007/s12274-016-1178-7

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Received: 14 April 2016
Revised: 12 June 2016
Accepted: 13 June 2016
Published: 20 July 2016
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016