Low-temperature quantum transport in CVD-grown single crystal graphene
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Chemical vapor deposition (CVD) is typically used for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. Therefore, we present a detailed study on the electronic properties of high-quality single-crystal monolayer graphene. The graphene is grown via CVD on copper, by using a cold-wall reactor, and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples occurs at back-gate voltages lower than 10 V, and a maximum mobility of 11, 000 cm2/(V·s) is attained. More than 12 flat and discernible half-integer quantum Hall plateaus occur under a high magnetic field on both the electron and hole sides of the Dirac point. At a low magnetic field, the magnetoresistance exhibits a weak localization peak. Using the theory of McCann et al., we obtain inelastic scattering lengths of > 1 μm, even at the charge neutrality point of the samples.
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Low-temperature quantum transport in CVD-grown single crystal graphene
)
Abstract
Chemical vapor deposition (CVD) is typically used for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. Therefore, we present a detailed study on the electronic properties of high-quality single-crystal monolayer graphene. The graphene is grown via CVD on copper, by using a cold-wall reactor, and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples occurs at back-gate voltages lower than 10 V, and a maximum mobility of 11, 000 cm2/(V·s) is attained. More than 12 flat and discernible half-integer quantum Hall plateaus occur under a high magnetic field on both the electron and hole sides of the Dirac point. At a low magnetic field, the magnetoresistance exhibits a weak localization peak. Using the theory of McCann et al., we obtain inelastic scattering lengths of > 1 μm, even at the charge neutrality point of the samples.
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Acknowledgements
The authors acknowledge financial support from the Italian Ministry of Foreign Affairs (Ministero degli Affari Esteri, Direzione Generale per la Promozione del Sistema Paese) in the framework of the agreement on scientific collaborations with Canada (Quebec) and Poland; and from the CNR in the framework of the agreement on scientific collaborations between CNR and JSPS (Japan), CNRS (France), and RFBR (Russia). We also acknowledge funding from the European Union Seventh Framework Programme under grant agreement no. 604391 Graphene Flagship. S. G. acknowledges support by Fondazione Silvio Tronchetti Provera.
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