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A new type of lead-free, formamidinium (FA)-based halide perovskites, FASnI2Br, are investigated as light-harvesting materials for low-temperature processed p–i–n heterojunction solar cells with different configurations. The FASnI2Br perovskite, with a band-gap of 1.68 eV, exhibits optimal photovoltaic performance after low-temperature annealing at 75 ℃. By using C60 as electron-transport layer, the device yields a hysteresis-less power conversion efficiency of 1.72%. The possible use of an inorganic MoOx film as a new type of independent hole-transport layer for the present tin-based perovskite solar cells is also demonstrated.
Financial support from CRC for Polymers program and ARC DP and FT programs is acknowledged. This work was performed in part at the Queensland node and Materials node of the Australian National Fabrication Facility (ANFF). M. Z. acknowledges the support from Chinese Scholarship Council (CSC).