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Nano Research 2016, 9(6): 1543-1560 https://doi.org/10.1007/s12274-016-1034-9
Review Article | Issue | Published: 29 April 2016

Optoelectronic devices based on two-dimensional transition metal dichalcogenides

Show Author's Information He Tian1,  Matthew L. Chin2,  Sina Najmaei2,  Qiushi Guo3,  Fengnian Xia3,  Han Wang1( ),  Madan Dubey2( )
Ming Hsieh Department of Electrical EngineeringUniversity of Southern CaliforniaLos AngelesCalifornia90089USA
United States Army Research LaboratoryMaryland20783-1197USA
Department of Electrical EngineeringYale UniversityNew HavenConnecticut06511USA
Keywords:
photodetector, molybdenum disulfide (MoS2), transition metal dichalcogenides (TMDCs), optoelectronic device, light-emitting diode (LED)
Cite this article:
Tian H, Chin ML, Najmaei S, et al. Optoelectronic devices based on two-dimensional transition metal dichalcogenides. Nano Research, 2016, 9(6): 1543-1560. https://doi.org/10.1007/s12274-016-1034-9
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Abstract Full text About this article

In the past few years, two-dimensional (2D) transition metal dichalcogenide (TMDC) materials have attracted increasing attention of the research community, owing to their unique electronic and optical properties, ranging from the valley–spin coupling to the indirect-to-direct bandgap transition when scaling the materials from multi-layer to monolayer. These properties are appealing for the development of novel electronic and optoelectronic devices with important applications in the broad fields of communication, computation, and healthcare. One of the key features of the TMDC family is the indirect-to-direct bandgap transition that occurs when the material thickness decreases from multilayer to monolayer, which is favorable for many photonic applications. TMDCs have also demonstrated unprecedented flexibility and versatility for constructing a wide range of heterostructures with atomic-level control over their layer thickness that is also free of lattice mismatch issues. As a result, layered TMDCs in combination with other 2D materials have the potential for realizing novel high-performance optoelectronic devices over a broad operating spectral range. In this article, we review the recent progress in the synthesis of 2D TMDCs and optoelectronic devices research. We also discuss the challenges facing the scalable applications of the family of 2D materials and provide our perspective on the opportunities offered by these materials for future generations of nanophotonics technology.


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About this article

Optoelectronic devices based on two-dimensional transition metal dichalcogenides

Show Author's information He Tian1, Matthew L. Chin2, Sina Najmaei2, Qiushi Guo3, Fengnian Xia3, Han Wang1( ), Madan Dubey2( )
Ming Hsieh Department of Electrical EngineeringUniversity of Southern CaliforniaLos AngelesCalifornia90089USA
United States Army Research LaboratoryMaryland20783-1197USA
Department of Electrical EngineeringYale UniversityNew HavenConnecticut06511USA

Abstract

In the past few years, two-dimensional (2D) transition metal dichalcogenide (TMDC) materials have attracted increasing attention of the research community, owing to their unique electronic and optical properties, ranging from the valley–spin coupling to the indirect-to-direct bandgap transition when scaling the materials from multi-layer to monolayer. These properties are appealing for the development of novel electronic and optoelectronic devices with important applications in the broad fields of communication, computation, and healthcare. One of the key features of the TMDC family is the indirect-to-direct bandgap transition that occurs when the material thickness decreases from multilayer to monolayer, which is favorable for many photonic applications. TMDCs have also demonstrated unprecedented flexibility and versatility for constructing a wide range of heterostructures with atomic-level control over their layer thickness that is also free of lattice mismatch issues. As a result, layered TMDCs in combination with other 2D materials have the potential for realizing novel high-performance optoelectronic devices over a broad operating spectral range. In this article, we review the recent progress in the synthesis of 2D TMDCs and optoelectronic devices research. We also discuss the challenges facing the scalable applications of the family of 2D materials and provide our perspective on the opportunities offered by these materials for future generations of nanophotonics technology.

Keywords: photodetector, molybdenum disulfide (MoS2), transition metal dichalcogenides (TMDCs), optoelectronic device, light-emitting diode (LED)

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Publication history
Copyright
Acknowledgements

Publication history

Received: 03 October 2015
Revised: 22 January 2016
Accepted: 28 January 2016
Published: 29 April 2016
Issue date: June 2016

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Acknowledgements

Acknowledgements

The authors acknowledge support from the National Science Foundation (No. EFMA-1542815), Army Research Laboratory, and USC Zumberge Individual Award.

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