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Nano Research 2016, 9(1): 72-93 https://doi.org/10.1007/s12274-016-1003-3
Review Article | Issue | Published: 20 January 2016

Two-dimensional layered material/silicon heterojunctions for energy and optoelectronic applications

Show Author's Information Yuming Wang,  Ke Ding,  Baoquan Sun,  Shuit-Tong Lee( ),  Jiansheng Jie( )
Institute of Functional Nano & Soft Materials (FUNSOM)Collaborative Innovation Center of Suzhou Nano Science and Technology (NANO-CIC)Jiangsu Key Laboratory for Carbon-Based Functional Materials & DevicesSoochow UniversitySuzhou215123China
Keywords:
silicon, solar cells, photodetectors, heterojunctions, two-dimensional layered materials
Cite this article:
Wang Y, Ding K, Sun B, et al. Two-dimensional layered material/silicon heterojunctions for energy and optoelectronic applications. Nano Research, 2016, 9(1): 72-93. https://doi.org/10.1007/s12274-016-1003-3
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Abstract Full text About this article

As one of the most important semiconductor materials, silicon (Si) has been widely used in current energy and optoelectronic devices, such as solar cells and photodetectors. However, the traditional Si p–n junction solar cells need complicated fabrication processes, leading to the high cost of Si photovoltaic devices. The wide applications of Si-based photodetectors are also hampered by their low sensitivity to ultraviolet and infrared light. Recently, two-dimensional (2D) layered materials have emerged as a new material system with tremendous potential for future energy and optoelectronic applications. The combination of Si with 2D layered materials represents an innovative approach to construct high-performance optoelectronic devices by harnessing the complementary advantages of both materials. In this review, we summarize the recent advances in 2D layered material/Si heterojunctions and their applications in photovoltaic and optoelectronic devices. Finally, the outlook and challenges of 2D layered material/Si heterojunctions for high-performance device applications are presented.


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About this article

Two-dimensional layered material/silicon heterojunctions for energy and optoelectronic applications

Show Author's information Yuming Wang, Ke Ding, Baoquan Sun, Shuit-Tong Lee( ), Jiansheng Jie( )
Institute of Functional Nano & Soft Materials (FUNSOM)Collaborative Innovation Center of Suzhou Nano Science and Technology (NANO-CIC)Jiangsu Key Laboratory for Carbon-Based Functional Materials & DevicesSoochow UniversitySuzhou215123China

Abstract

As one of the most important semiconductor materials, silicon (Si) has been widely used in current energy and optoelectronic devices, such as solar cells and photodetectors. However, the traditional Si p–n junction solar cells need complicated fabrication processes, leading to the high cost of Si photovoltaic devices. The wide applications of Si-based photodetectors are also hampered by their low sensitivity to ultraviolet and infrared light. Recently, two-dimensional (2D) layered materials have emerged as a new material system with tremendous potential for future energy and optoelectronic applications. The combination of Si with 2D layered materials represents an innovative approach to construct high-performance optoelectronic devices by harnessing the complementary advantages of both materials. In this review, we summarize the recent advances in 2D layered material/Si heterojunctions and their applications in photovoltaic and optoelectronic devices. Finally, the outlook and challenges of 2D layered material/Si heterojunctions for high-performance device applications are presented.

Keywords: silicon, solar cells, photodetectors, heterojunctions, two-dimensional layered materials

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Publication history
Copyright
Acknowledgements

Publication history

Received: 05 December 2015
Revised: 03 January 2016
Accepted: 04 January 2016
Published: 20 January 2016
Issue date: January 2016

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Acknowledgements

Acknowledgements

This work was supported by the National Basic Research Program of China (Nos. 2012CB932400 and 2013CB933500), the Major Research Plan of the National Natural Science Foundation of China (Nos. 91233110 and 91333208), the National Natural Science Foundation of China (No. 61422403), the Natural Science Foundation of Jiangsu Province (No. BK20140332), and a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD). This work was also supported by QinLan Project.

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