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Van der Waals (vdW) heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor (FET) compared with the individual components, and a high current responsivity (Rλ ) and external quantum efficiency (EQE) of 6.75 A/W and 1, 266%, respectively, for the photodetector.

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nr-9-2-507_ESM.pdf (2.7 MB)
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Publication history

Received: 28 August 2015
Revised: 25 October 2015
Accepted: 29 October 2015
Published: 03 December 2015
Issue date: February 2016

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© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015

Acknowledgements

Acknowledgements

This work was supported by the "Hundred Talents Program" of Chinese Academy of Sciences (CAS), the National Natural Science Foundation of China (No. 91233120), and the CAS/SAFEA International Partnership Program for Creative Research Teams.

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Reprints and Permission requests may be sought directly from editorial office.
Email: nanores@tup.tsinghua.edu.cn

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