497
Views
14
Crossref
N/A
WoS
13
Scopus
0
CSCD
Typically, molybdenum disulfide (MoS2) synthesized by chemical vapor deposition (CVD) is polycrystalline; as a result, the scattering of charge carriers at grain boundaries can lead to performances lower than those observed in exfoliated single-crystal MoS2. Until now, the electrical properties of grain boundaries have been indirectly studied without accurate knowledge of their location. Here, we present a technique to measure the electrical behavior of individual grain boundaries in CVD-grown MoS2, imaged with the help of aligned liquid crystals. Unexpectedly, the electrical conductance decreased by three orders of magnitude for the grain boundaries with the lowest on/off ratio. Our study provides a useful technique to fabricate devices on a single-crystal area, using optimized growth conditions and device geometry. The photoresponse, studied within a MoS2 single grain, showed that the device responsivity was comparable with that of the exfoliated MoS2-based photodetectors.
This research was supported by the Basic Science Research Program through the NRF funded by the Ministry of Science, ICT & Future Planning (No. 2013R1A1A1A05005298) and the Priority Research Centers Program (No. 2010-0020207) by the Ministry of Education. Also, this work was supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, industry & Energy (No. 20154030200630).