Strain-modulation and service behavior of Au–MgO–ZnO ultraviolet photodetector by piezo-phototronic effect
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Au–MgO–ZnO (AMZ) ultraviolet (UV) photodetectors were fabricated to enhance their sensitivities by an inserting ultrathin insulating MgO layer. With the insulating layer, the sensitivities of the UV photodetectors were improved via the reduction of the dark current. Furthermore, strain modulation was used to enhance the sensitivities of the AMZ UV photodetectors. The sensitivities of the photodetectors were enhanced by the piezo-phototronic effect. However, there was a limiting value of the applied strains to enhance the sensitivity of the photodetector. When the external strains exceeded the limiting value, the sensitivity decreased because of the tunneling dark current. The external strains loaded on the photodetectors result in the degradation of the photodetectors, and an applied bias can accelerate the process. This work presents a prospective approach to engineer the performance of a UV photodetector. In addition, the study on the service behavior of the photodetectors may offer a strain range and theoretical support for safely using and studying metal–insulator–semiconductor (MIS) UV photodetectors.
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Strain-modulation and service behavior of Au–MgO–ZnO ultraviolet photodetector by piezo-phototronic effect
)
Abstract
Au–MgO–ZnO (AMZ) ultraviolet (UV) photodetectors were fabricated to enhance their sensitivities by an inserting ultrathin insulating MgO layer. With the insulating layer, the sensitivities of the UV photodetectors were improved via the reduction of the dark current. Furthermore, strain modulation was used to enhance the sensitivities of the AMZ UV photodetectors. The sensitivities of the photodetectors were enhanced by the piezo-phototronic effect. However, there was a limiting value of the applied strains to enhance the sensitivity of the photodetector. When the external strains exceeded the limiting value, the sensitivity decreased because of the tunneling dark current. The external strains loaded on the photodetectors result in the degradation of the photodetectors, and an applied bias can accelerate the process. This work presents a prospective approach to engineer the performance of a UV photodetector. In addition, the study on the service behavior of the photodetectors may offer a strain range and theoretical support for safely using and studying metal–insulator–semiconductor (MIS) UV photodetectors.
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Acknowledgements
This work was supported by the National Basic Research Program of China (No. 2013CB932601), the Major Project of International Cooperation and Exchanges (No. 2012DFA50990), the Program of Introducing Talents of Discipline to Universities (No. B14003), National Natural Science Foundation of China (Nos. 51172022, 51232001, and 51372020), the Fundamental Research Funds for Central Universities, State Key Lab of Advanced Metals and Materials (No. 2014Z-11), and Program for New Century Excellent Talents in Universities (No. NCET-12-0777).
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