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Nano Research 2015, 8(11): 3651-3661 https://doi.org/10.1007/s12274-015-0865-0
Research Article | Issue | Published: 12 October 2015

Interlayer interactions in anisotropic atomically thin rhenium diselenide

Show Author's Information Huan Zhao1,§,  Jiangbin Wu2,§,  Hongxia Zhong3,5,  Qiushi Guo4,  Xiaomu Wang4,  Fengnian Xia4,  Li Yang3,  Pingheng Tan2( ),  Han Wang1( )
Ming Hsieh Department of Electrical EngineeringUniversity of Southern CaliforniaLos AngelesCA90089USA
State Key Laboratory of Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
Department of PhysicsWashington University in St LouisSt LouisMO63130USA
Department of Electrical EngineeringYale UniversityNew HavenCT06511USA
State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871China

§ These authors contributed equally to this work.

Keywords:
anisotropy, photoluminescence, Raman, rhenium diselenide
Cite this article:
Zhao H, Wu J, Zhong H, et al. Interlayer interactions in anisotropic atomically thin rhenium diselenide. Nano Research, 2015, 8(11): 3651-3661. https://doi.org/10.1007/s12274-015-0865-0
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Abstract Full text Electronic supplementary material About this article

In this work, we study the interlayer phonon vibration modes, the layer-numberdependent optical bandgap, and the anisotropic photoluminescence (PL) spectra of atomically thin rhenium diselenide (ReSe2) for the first time. The ultralow frequency interlayer Raman spectra and the polarization-resolved high frequency Raman spectra in ReSe2 allow the identification of its layer number and crystal orientation. Furthermore, PL measurements show the anisotropic optical emission intensity of the material with its bandgap increasing from 1.26 eV in the bulk to 1.32 eV in the monolayer. The study of the layer-number dependence of the Raman modes and the PL spectra reveals relatively weak van der Waal's interaction and two-dimensional (2D) quantum confinement in the atomically thin ReSe2. The experimental observation of the intriguing anisotropic interlayer interaction and tunable optical transition in monolayer and multilayer ReSe2 establishes the foundation for further exploration of this material in the development of anisotropic optoelectronic devices functioning in the near-infrared spectrum, which is important for many applications in optical communication and infrared sensing.


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Electronic supplementary material
About this article

Interlayer interactions in anisotropic atomically thin rhenium diselenide

Show Author's information Huan Zhao1,§, Jiangbin Wu2,§, Hongxia Zhong3,5, Qiushi Guo4, Xiaomu Wang4, Fengnian Xia4, Li Yang3, Pingheng Tan2( ), Han Wang1( )
Ming Hsieh Department of Electrical EngineeringUniversity of Southern CaliforniaLos AngelesCA90089USA
State Key Laboratory of Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
Department of PhysicsWashington University in St LouisSt LouisMO63130USA
Department of Electrical EngineeringYale UniversityNew HavenCT06511USA
State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871China

§ These authors contributed equally to this work.

Abstract

In this work, we study the interlayer phonon vibration modes, the layer-numberdependent optical bandgap, and the anisotropic photoluminescence (PL) spectra of atomically thin rhenium diselenide (ReSe2) for the first time. The ultralow frequency interlayer Raman spectra and the polarization-resolved high frequency Raman spectra in ReSe2 allow the identification of its layer number and crystal orientation. Furthermore, PL measurements show the anisotropic optical emission intensity of the material with its bandgap increasing from 1.26 eV in the bulk to 1.32 eV in the monolayer. The study of the layer-number dependence of the Raman modes and the PL spectra reveals relatively weak van der Waal's interaction and two-dimensional (2D) quantum confinement in the atomically thin ReSe2. The experimental observation of the intriguing anisotropic interlayer interaction and tunable optical transition in monolayer and multilayer ReSe2 establishes the foundation for further exploration of this material in the development of anisotropic optoelectronic devices functioning in the near-infrared spectrum, which is important for many applications in optical communication and infrared sensing.

Keywords: anisotropy, photoluminescence, Raman, rhenium diselenide

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Publication history
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Acknowledgements

Publication history

Received: 28 April 2015
Revised: 16 July 2015
Accepted: 22 July 2015
Published: 12 October 2015
Issue date: November 2015

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015

Acknowledgements

Acknowledgements

This work is partially supported by National Science Foundation EFRI 2-DARE program (No. 1542815) and Zumberge Research and Innovation Fund Award. P.-H. Tan acknowledges support from the National Natural Science Foundation of China (Nos. 11225421, 11474277, and 11434010).

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