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Nano Research 2015, 8(10): 3332-3341 https://doi.org/10.1007/s12274-015-0833-8
Research Article | Issue | Published: 27 August 2015

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Show Author's Information Xiang Yuan1,  Lei Tang1,  Peng Wang2,  Zhigang Chen3,  Yichao Zou3,  Xiaofeng Su4,  Cheng Zhang1,  Yanwen Liu1,  Weiyi Wang1,  Cong Liu2,  Fansheng Chen4,  Jin Zou3,5,  Peng Zhou6,  Weida Hu2,§( ),  Faxian Xiu1,§( )
State Key Laboratory of Surface Physics and Department of Physicsand Collaborative Innovation Center of Advanced MicrostructuresFudan UniversityShanghai200433China
National Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
Materials EngineeringThe University of QueenslandBrisbaneQLD4072Australia
Satellite Remote Sensing LaboratoryShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
Centre for Microscopy and MicroanalysisThe University of Queensland, Brisbane, QLD 4072Australia
State Key Laboratory of ASIC and SystemDepartment of MicroelectronicsFudan UniversityShanghai200433China

§These authors contributed equally to this work.

Keywords:
imaging, photodiode, photosensor, GaTe, wafer-scale two-dimensional materials, p-n junction
Cite this article:
Yuan X, Tang L, Wang P, et al. Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe. Nano Research, 2015, 8(10): 3332-3341. https://doi.org/10.1007/s12274-015-0833-8
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Abstract Full text Electronic supplementary material About this article

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm2/(V·s) by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.


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Abstract
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Electronic supplementary material
About this article

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Show Author's information Xiang Yuan1, Lei Tang1, Peng Wang2, Zhigang Chen3, Yichao Zou3, Xiaofeng Su4, Cheng Zhang1, Yanwen Liu1, Weiyi Wang1, Cong Liu2, Fansheng Chen4, Jin Zou3,5, Peng Zhou6, Weida Hu2,§( ), Faxian Xiu1,§( )
State Key Laboratory of Surface Physics and Department of Physicsand Collaborative Innovation Center of Advanced MicrostructuresFudan UniversityShanghai200433China
National Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
Materials EngineeringThe University of QueenslandBrisbaneQLD4072Australia
Satellite Remote Sensing LaboratoryShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
Centre for Microscopy and MicroanalysisThe University of Queensland, Brisbane, QLD 4072Australia
State Key Laboratory of ASIC and SystemDepartment of MicroelectronicsFudan UniversityShanghai200433China

§These authors contributed equally to this work.

Abstract

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm2/(V·s) by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.

Keywords: imaging, photodiode, photosensor, GaTe, wafer-scale two-dimensional materials, p-n junction

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Publication history
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Acknowledgements

Publication history

Received: 15 April 2015
Revised: 06 June 2015
Accepted: 08 June 2015
Published: 27 August 2015
Issue date: October 2015

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015

Acknowledgements

Acknowledgements

This work was supported by the National Young 1000 Talent Plan, Pujiang Talent Plan in Shanghai, National Natural Science Foundation of China (Nos. 61322407, 11474058, and 11322441), the Chinese National Science Fund for Talent Training in Basic Science (No. J1103204), and Ten Thousand Talents Program for young talents. Part of the sample fabrication was performed at Fudan Nano-fabrication Laboratory. We acknowledge Yuanbo Zhang, Yizheng Wu, Zuimin Jiang, Likai Li, Boliang Chen for great assistance during the device fabrication and measurements.

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