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Research Article

Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation

Xiuju Song1Junfeng Gao3Yufeng Nie1Teng Gao1Jingyu Sun1Donglin Ma1Qiucheng Li1Yubin Chen1Chuanhong Jin4Alicja Bachmatiuk5Mark H. Rümmeli6,7Feng Ding3( )Yanfeng Zhang1,2( )Zhongfan Liu1( )
Center for Nanochemistry (CNC)Beijing Science and Engineering Center for Low Dimensional Carbon MaterialsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringAcademy for Advanced Interdisciplinary StudiesPeking UniversityBeijing100871China
Department of Materials Science and EngineeringCollege of EngineeringPeking UniversityBeijing100871China
Institute of Textiles and ClothingHong Kong Polytechnic UniversityHong KongChina
State Key Laboratory of Silicon MaterialsDepartment of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
Centre of Polymer and Carbon MaterialsPolish Academy of Sciences, M. Curie-Sklodowskiej 34Zabrze41-819Poland
Department of Energy ScienceDepartment of PhysicsSungkyunkwan UniversitySuwon440-746Republic of Korea
IBS Center for Integrated Nanostructure PhysicsInstitute for Basic Science (IBS)Daejon305-701Republic of Korea
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Abstract

Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to ~72 μm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.

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Nano Research
Pages 3164-3176
Cite this article:
Song X, Gao J, Nie Y, et al. Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation. Nano Research, 2015, 8(10): 3164-3176. https://doi.org/10.1007/s12274-015-0816-9

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Received: 17 March 2015
Revised: 11 May 2015
Accepted: 12 May 2015
Published: 14 August 2015
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015
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