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Nano Research 2015, 8(9): 2946-2953 https://doi.org/10.1007/s12274-015-0799-6
Research Article | Issue | Published: 14 August 2015

Metallic and ferromagnetic MoS2 nanobelts with vertically aligned edges

Show Author's Information Guanchen Xu1,2,§,  Xinsheng Wang1,§,  Yupeng Sun1,  Xiao Chen2( ),  Jingying Zheng1,  Lifei Sun1,  Liying Jiao1( ),  Jinghong Li1( )
Department of ChemistryTsinghua UniversityBeijing100084China
Key Laboratory of Colloid and Interface ChemistryShandong UniversityJinan250100China

§ These authors contributed equally to the work.

Keywords:
ferromagnetic, nanobelt, metallic, MoS2 two-dimensional (2D) atomic crystal, edge effect
Cite this article:
Xu G, Wang X, Sun Y, et al. Metallic and ferromagnetic MoS2 nanobelts with vertically aligned edges. Nano Research, 2015, 8(9): 2946-2953. https://doi.org/10.1007/s12274-015-0799-6
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Abstract Full text Electronic supplementary material About this article

Edge effects are predicted to significantly impact the properties of low dimensional materials with layered structures. The synthesis of low dimensional materials with copious edges is desired for exploring the effects of edges on the band structure and properties of these materials. Here we developed an approach for synthesizing MoS2 nanobelts terminated with vertically aligned edges by sulfurizing hydrothermally synthesized MoO3 nanobelts in the gas phase through a kinetically driven process; we then investigated the electrical and magnetic properties of these metastable materials. These edge-terminated MoS2 nanobelts were found to be metallic and ferromagnetic, and thus dramatically different from the semiconducting and nonmagnetic two-dimensional (2D) and three-dimensional (3D) 2H-MoS2 materials. The transitions in electrical and magnetic properties elucidate the fact that edges can tune the properties of low dimensional materials. The unique structure and properties of this one-dimensional (1D) MoS2 material will enable its applications in electronics, spintronics, and catalysis.


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About this article

Metallic and ferromagnetic MoS2 nanobelts with vertically aligned edges

Show Author's information Guanchen Xu1,2,§, Xinsheng Wang1,§, Yupeng Sun1, Xiao Chen2( ), Jingying Zheng1, Lifei Sun1, Liying Jiao1( ), Jinghong Li1( )
Department of ChemistryTsinghua UniversityBeijing100084China
Key Laboratory of Colloid and Interface ChemistryShandong UniversityJinan250100China

§ These authors contributed equally to the work.

Abstract

Edge effects are predicted to significantly impact the properties of low dimensional materials with layered structures. The synthesis of low dimensional materials with copious edges is desired for exploring the effects of edges on the band structure and properties of these materials. Here we developed an approach for synthesizing MoS2 nanobelts terminated with vertically aligned edges by sulfurizing hydrothermally synthesized MoO3 nanobelts in the gas phase through a kinetically driven process; we then investigated the electrical and magnetic properties of these metastable materials. These edge-terminated MoS2 nanobelts were found to be metallic and ferromagnetic, and thus dramatically different from the semiconducting and nonmagnetic two-dimensional (2D) and three-dimensional (3D) 2H-MoS2 materials. The transitions in electrical and magnetic properties elucidate the fact that edges can tune the properties of low dimensional materials. The unique structure and properties of this one-dimensional (1D) MoS2 material will enable its applications in electronics, spintronics, and catalysis.

Keywords: ferromagnetic, nanobelt, metallic, MoS2 two-dimensional (2D) atomic crystal, edge effect

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Publication history
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Acknowledgements

Publication history

Received: 05 February 2015
Revised: 19 April 2015
Accepted: 20 April 2015
Published: 14 August 2015
Issue date: September 2015

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015

Acknowledgements

Acknowledgements

X. C. acknowledges the financial support from the National Natural Science Foundation of China (No. 21373127). L. Y. J. acknowledges the National Natural Science Foundation of China (Nos. 21322303 and 51372134), National Program for Thousand Young Talents of China, Tsinghua University Initiative Scientific Research Program and Tsinghua-Foxconn Nanotechnology Research Center Research Program. J. H. L. acknowledges the National Basic Research Program of China (Nos. 2011CB935704 and 2013CB934004) and the National Natural Science Foundation of China (Nos. 21235004 and 21327806).

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