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Two-dimensional layered IV–VI chalcogenides are attracting great interest for applications in next-generation optoelectronic, photovoltaic, and thermoelectric devices. However, great challenges in the controllable synthesis of high-quality IV–VI chalcogenide nanostructures have hindered their in-depth studies and practical applications to date. Here we report, for the first time, a feasible synthesis of single-crystal IV–VI SnSe nanoplates in a controlled manner on mica substrates by vapor transport deposition. The as-grown SnSe nanoplates have approximately square shapes with controllable side lengths varying from 1 to 6 μm. Electrical transport and optoelectronic measurements show that as-obtained SnSe nanoplates display p-type conductivity and high photoresponsivity.

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Publication history
Copyright
Acknowledgements

Publication history

Received: 10 September 2014
Revised: 30 November 2014
Accepted: 02 December 2014
Published: 21 January 2015
Issue date: January 2015

Copyright

© Tsinghua University Press and Springer‐Verlag Berlin Heidelberg 2014

Acknowledgements

Acknowledgements

We thank Qianfan Zhang for helpful discussions. This work was financially supported by the National Natural Science Foundation of China (Nos. 21173004, 21222303, 51121091, 51290272, and 51222202), the National Basic Research Program of China (Nos. 2011CB921904, 2013CB932603, 2014CB932500, and 2012CB933404), the Fundamental Research Funds for the Central Universities (No. 2012QNA4005), and National Program for Support of Top-Notch Young Professionals.

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