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Two-dimensional layered IV–VI chalcogenides are attracting great interest for applications in next-generation optoelectronic, photovoltaic, and thermoelectric devices. However, great challenges in the controllable synthesis of high-quality IV–VI chalcogenide nanostructures have hindered their in-depth studies and practical applications to date. Here we report, for the first time, a feasible synthesis of single-crystal IV–VI SnSe nanoplates in a controlled manner on mica substrates by vapor transport deposition. The as-grown SnSe nanoplates have approximately square shapes with controllable side lengths varying from 1 to 6 μm. Electrical transport and optoelectronic measurements show that as-obtained SnSe nanoplates display p-type conductivity and high photoresponsivity.
We thank Qianfan Zhang for helpful discussions. This work was financially supported by the National Natural Science Foundation of China (Nos. 21173004, 21222303, 51121091, 51290272, and 51222202), the National Basic Research Program of China (Nos. 2011CB921904, 2013CB932603, 2014CB932500, and 2012CB933404), the Fundamental Research Funds for the Central Universities (No. 2012QNA4005), and National Program for Support of Top-Notch Young Professionals.