Journal Home > Volume 8 , Issue 1
Nano Research 2015, 8(1): 288-295 https://doi.org/10.1007/s12274-014-0676-8
Research Article | Issue | Published: 21 January 2015

Controlled synthesis of single-crystal SnSe nanoplates

Show Author's Information Shuli Zhao1,2,  Huan Wang1,  Yu Zhou1,2,  Lei Liao1,  Ying Jiang3,  Xiao Yang1,  Guanchu Chen1,  Min Lin1,  Yong Wang3,  Hailin Peng1,2( ),  Zhongfan Liu1,2( )
Center for NanochemistryBeijing National Laboratory for Molecular Sciences (BNLMS)College of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
Academy for Advanced Interdisciplinary StudiesPeking UniversityBeijing100871China
Center of Electron Microscopy and State Key Laboratory of Silicon MaterialsDepartment of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
Keywords:
nanoplate, optoelectronics, SnSe, two-dimensional layered crystals, IV–VI chalcogenide
Cite this article:
Zhao S, Wang H, Zhou Y, et al. Controlled synthesis of single-crystal SnSe nanoplates. Nano Research, 2015, 8(1): 288-295. https://doi.org/10.1007/s12274-014-0676-8
Download citation
EndNote(RIS)
BibTeX

546

Views

41

Downloads

Citations

207

Crossref

N/A

WoS

205

Scopus

7

CSCD

Abstract Full text Electronic supplementary material About this article

Two-dimensional layered IV–VI chalcogenides are attracting great interest for applications in next-generation optoelectronic, photovoltaic, and thermoelectric devices. However, great challenges in the controllable synthesis of high-quality IV–VI chalcogenide nanostructures have hindered their in-depth studies and practical applications to date. Here we report, for the first time, a feasible synthesis of single-crystal IV–VI SnSe nanoplates in a controlled manner on mica substrates by vapor transport deposition. The as-grown SnSe nanoplates have approximately square shapes with controllable side lengths varying from 1 to 6 μm. Electrical transport and optoelectronic measurements show that as-obtained SnSe nanoplates display p-type conductivity and high photoresponsivity.


menu
Abstract
Full text
Outline
Electronic supplementary material
About this article

Controlled synthesis of single-crystal SnSe nanoplates

Show Author's information Shuli Zhao1,2, Huan Wang1, Yu Zhou1,2, Lei Liao1, Ying Jiang3, Xiao Yang1, Guanchu Chen1, Min Lin1, Yong Wang3, Hailin Peng1,2( ), Zhongfan Liu1,2( )
Center for NanochemistryBeijing National Laboratory for Molecular Sciences (BNLMS)College of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
Academy for Advanced Interdisciplinary StudiesPeking UniversityBeijing100871China
Center of Electron Microscopy and State Key Laboratory of Silicon MaterialsDepartment of Materials Science and EngineeringZhejiang UniversityHangzhou310027China

Abstract

Two-dimensional layered IV–VI chalcogenides are attracting great interest for applications in next-generation optoelectronic, photovoltaic, and thermoelectric devices. However, great challenges in the controllable synthesis of high-quality IV–VI chalcogenide nanostructures have hindered their in-depth studies and practical applications to date. Here we report, for the first time, a feasible synthesis of single-crystal IV–VI SnSe nanoplates in a controlled manner on mica substrates by vapor transport deposition. The as-grown SnSe nanoplates have approximately square shapes with controllable side lengths varying from 1 to 6 μm. Electrical transport and optoelectronic measurements show that as-obtained SnSe nanoplates display p-type conductivity and high photoresponsivity.

Keywords: nanoplate, optoelectronics, SnSe, two-dimensional layered crystals, IV–VI chalcogenide

References(38)

1

Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science 2004, 306, 666–669.
DOI Google Scholar
2

Geim, A. K.; Novoselov, K. S. The rise of graphene. Nat. Mater. 2007, 6, 183–191.
DOI Google Scholar
3

Kubota, Y.; Watanabe, K.; Tsuda, O.; Taniguchi, T. Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure. Science 2007, 317, 932–934.
DOI Google Scholar
4

Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
DOI Google Scholar
5

Matte, H. S. S. R.; Gomathi, A.; Manna, A. K.; Late, D. J.; Datta, R.; Pati, S. K.; Rao, C. N. R. MoS2 and WS2 analogues of graphene. Angew. Chem. Int. Edit. 2010, 49, 4059–4062.
DOI Google Scholar
6

Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotech 2011, 6, 147–150.
DOI Google Scholar
7

Huang, X.; Zeng, Z. Y.; Zhang, H. Metal dichalcogenide nanosheets: Preparation, properties and applications. Chem. Soc. Rev. 2013, 42, 1934–1946.
DOI Google Scholar
8

Bolotin, K. I.; Ghahari, F.; Shulman, M. D.; Stormer, H. L.; Kim, P. Observation of the fractional quantum Hall effect in graphene. Nature 2009, 462, 196–199.
DOI Google Scholar
9

Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L.; Hone, J. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotech 2010, 5, 722–726.
DOI Google Scholar
10

Zhang, H. J.; Liu, C. X.; Qi, X. L.; Dai, X.; Fang, Z.; Zhang, S. C. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nat. Phys. 2009, 5, 438–442.
DOI Google Scholar
11

Kong, D. S.; Randel, J. C.; Peng, H. L.; Cha, J. J.; Meister, S.; Lai, K. J.; Chen, Y. L.; Shen, Z. X.; Manoharan, H. C.; Cui, Y. Topological insulator nanowires and nanoribbons. Nano Lett. 2010, 10, 329–333.
DOI Google Scholar
12

Peng, H. L.; Lai, K. J.; Kong, D. S.; Meister, S.; Chen, Y. L.; Qi, X. L.; Zhang, S. C.; Shen, Z. X.; Cui, Y. Aharonov– Bohm interference in topological insulator nanoribbons. Nat. Mater. 2010, 9, 225–229.
DOI Google Scholar
13

Chun, D.; Walser, R. M.; Bene, R. W.; Courtney, T. H. Polarity-dependent memory switching in devices with SnSe and SnSe2 crystals. Appl. Phys. Lett. 1974, 24, 479–481.
DOI Google Scholar
14

Agarwal, A.; Vashi, M. N.; Lakshminarayana, D.; Batra, N. M. Electrical resistivity anisotropy in layered p-SnSe single crystals. J. Mater. Sci-Mater. El. 2000, 11, 67–71.
DOI Google Scholar
15

Boscher, N. D.; Carmalt, C. J.; Palgrave, R. G.; Parkin, I. P. Atmospheric pressure chemical vapor deposition of SnSe and SnSe2 thin films on glass. Thin Solid Films 2008, 516, 4750–4757.
DOI Google Scholar
16

Sumesh, C. K.; Patel, M.; Patel, K. D.; Solanki, G. K.; Pathak, V. M.; Srivastav, R. Low temperature electrical transport properties in p-SnSe single crystals. Eur. Phys. J-Appl. Phys. 2011, 53, 10302.
DOI Google Scholar
17

Xue, M. Z.; Yao, J.; Cheng, S. C.; Fu, Z. W. Lithium electrochemistry of a novel SnSe thin-film anode. J. Electrochem. Soc. 2006, 153, A270–A274.
DOI Google Scholar
18

Lefebvre, I.; Szymanski, M. A.; Olivier-Fourcade, J.; Jumas, J. C. Electronic structure of tin monochalcogenides from SnO to SnTe. Phys. Rev. B 1998, 58, 1896–1906.
DOI Google Scholar
19

Baumgardner, W. J.; Choi, J. J.; Lim, Y. F.; Hanrath, T. SnSe nanocrystals: Synthesis, structure, optical properties, and surface chemistry. J. Am. Chem. Soc. 2010, 132, 9519–9521.
DOI Google Scholar
20

Franzman, M. A.; Schlenker, C. W.; Thompson, M. E.; Brutchey, R. L. Solution-phase synthesis of SnSe nanocrystals for use in solar cells. J. Am. Chem. Soc. 2010, 132, 4060–4062.
DOI Google Scholar
21

Liu, S.; Guo, X. Y.; Li, M. R.; Zhang, W. H.; Liu, X. Y.; Li, C. Solution-phase synthesis and characterization of single- crystalline SnSe nanowires. Angew. Chem. Int. Edit. 2011, 50, 12050–12053.
DOI Google Scholar
22

Zhao, L. D.; Lo, S. H.; Zhang, Y. S.; Sun, H.; Tan, G. J.; Uher, C.; Wolverton, C.; Dravid, V. P.; Kanatzidis, M. G. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals. Nature 2014, 508, 373–377.
DOI Google Scholar
23

Car, R.; Ciucci, G.; Quartapelle, L. Electronic Band- Structure of SnSe. Phys. Status. Solidi. B. 1978, 86, 471–478.
DOI Google Scholar
24

Li, L.; Chen, Z.; Hu, Y.; Wang, X. W.; Zhang, T.; Chen, W.; Wang, Q. B. Single-layer single-crystalline snse nanosheets. J. Am. Chem. Soc. 2013, 135, 1213–1216.
DOI Google Scholar
25

Vaughn, D. D.; In, S. I.; Schaak, R. E. A Precursor-limited nanoparticle coalescence pathway for tuning the thickness of laterally-uniform colloidal nanosheets: The case of SnSe. ACS nano 2011, 5, 8852–8860.
DOI Google Scholar
26

Tritsaris, G. A.; Malone, B. D.; Kaxiras, E. Optoelectronic properties of single-layer, double-layer, and bulk tin sulfide: A theoretical study. J. Appl. Phys. 2013, 113, 233507.
DOI Google Scholar
27

Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of two- dimensional transition metal dichalcogenides. Nat. Nanotech 2012, 7, 699-712.
DOI Google Scholar
28

Antunez, P. D.; Buckley, J. J.; Brutchey, R. L. Tin and germanium monochalcogenide IV–VI semiconductor nanocrystals for use in solar cells. Nanoscale 2011, 3, 2399-2411.
DOI Google Scholar
29

Li, H.; Cao, J.; Zheng, W. S.; Chen, Y. L.; Wu, D.; Dang, W. H.; Wang, K.; Peng, H. L.; Liu, Z. F. Controlled synthesis of topological insulator nanoplate arrays on mica. J. Am. Chem. Soc. 2012, 134, 6132–6135.
DOI Google Scholar
30

Dang, W. H.; Peng, H. L.; Li, H.; Wang, P.; Liu, Z. F. Epitaxial heterostructures of ultrathin topological insulator nanoplate and graphene. Nano Lett. 2010, 10, 2870–2876.
DOI Google Scholar
31

Peng, H. L.; Dang, W. H.; Cao, J.; Chen, Y. L.; Wu, W.; Zheng, W. S.; Li, H.; Shen, Z. X.; Liu, Z. F. Topological insulator nanostructures for near-infrared transparent flexible electrodes. Nat. Chem. 2012, 4, 281–286.
DOI Google Scholar
32

Colin, R.; J. Drowart, J. Thermodynamic study of tin selenide and tin telluride using a mass spectrometer. J. Trans. Faraday Soc. 1964, 60, 673–683.
DOI Google Scholar
33

Vaughn, D. D.; Patel, R. J.; Hickner, M. A.; Schaak, R. E. Single-crystal colloidal nanosheets of GeS and GeSe. J. Am. Chem. Soc. 2010, 132, 15170–15172.
DOI Google Scholar
34

Yoon, S. M.; Song, H. J.; Choi, H. C. p-Type Semiconducting GeSe combs by a vaporization-condensation-recrystallization (VCR) process. Adv. Mater. 2010, 22, 2164–2167.
DOI Google Scholar
35

Xue, D. J.; Tan, J. H.; Hu, J. S.; Hu, W. P.; Guo, Y. G.; Wan, L. J. Anisotropic photoresponse properties of single micrometer-sized GeSe nanosheet. Adv. Mater. 2012, 24, 4528–4533.
DOI Google Scholar
36

Chandrasekhar, H. R.; Humphreys, R. G.; Zwick, U.; Cardona, M. Infrared and Raman spectra ofthe IV–VI compounds SnS and SnSe. Phys. Rev. B 1977, 15, 2177–2183.
DOI Google Scholar
37

Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides. J. Appl. Phys. 2007, 101, 014507.
DOI Google Scholar
38

Maier, H.; Daniel, D. R. SnSe single-crystals-sublimation growth, deviation from stoichiometry and electrical-properties. J. Electron. Mater. 1977, 6, 693–704.
DOI Google Scholar
File
12274_2014_676_MOESM1_ESM.pdf (1 MB)
Publication history
Copyright
Acknowledgements

Publication history

Received: 10 September 2014
Revised: 30 November 2014
Accepted: 02 December 2014
Published: 21 January 2015
Issue date: January 2015

Copyright

© Tsinghua University Press and Springer‐Verlag Berlin Heidelberg 2014

Acknowledgements

Acknowledgements

We thank Qianfan Zhang for helpful discussions. This work was financially supported by the National Natural Science Foundation of China (Nos. 21173004, 21222303, 51121091, 51290272, and 51222202), the National Basic Research Program of China (Nos. 2011CB921904, 2013CB932603, 2014CB932500, and 2012CB933404), the Fundamental Research Funds for the Central Universities (No. 2012QNA4005), and National Program for Support of Top-Notch Young Professionals.

Return