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Nano Research 2015, 8(4): 1320-1326 https://doi.org/10.1007/s12274-014-0623-8
Research Article | Issue | Published: 01 December 2014

Highly uniform carbon nanotube nanomesh network transistors

Show Author's Information Sung-Jin Choi1,  Patrick Bennett2,3,  Dongil Lee4,  Jeffrey Bokor2,5( )
School of Electrical EngineeringKookmin University, Seoul, 136-702South Korea
Department of Electrical Engineering and Computer SciencesUniversity of CaliforniaBerkeleyCA94720USA
Applied Science & TechnologyUniversity of CaliforniaBerkeleyCA94720USA
Department of Electrical EngineeringKorea Advanced Institute of Science and TechnologyDaejeon, 305-701South Korea
Materials Sciences DivisionLawrence Berkeley National LaboratoriesLawrenceCA94720USA
Keywords:
carbon nanotube, thin-film transistor, solution process, network, nanomesh, highly uniform
Cite this article:
Choi S-J, Bennett P, Lee D, et al. Highly uniform carbon nanotube nanomesh network transistors. Nano Research, 2015, 8(4): 1320-1326. https://doi.org/10.1007/s12274-014-0623-8
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Abstract Full text Electronic supplementary material About this article

A new type of single-walled carbon nanotube (SWNT) thin-film transistor (TFT) structure with a nanomesh network channel has been fabricated from a preseparated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thinfilm display electronics.


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Electronic supplementary material
About this article

Highly uniform carbon nanotube nanomesh network transistors

Show Author's information Sung-Jin Choi1, Patrick Bennett2,3, Dongil Lee4, Jeffrey Bokor2,5( )
School of Electrical EngineeringKookmin University, Seoul, 136-702South Korea
Department of Electrical Engineering and Computer SciencesUniversity of CaliforniaBerkeleyCA94720USA
Applied Science & TechnologyUniversity of CaliforniaBerkeleyCA94720USA
Department of Electrical EngineeringKorea Advanced Institute of Science and TechnologyDaejeon, 305-701South Korea
Materials Sciences DivisionLawrence Berkeley National LaboratoriesLawrenceCA94720USA

Abstract

A new type of single-walled carbon nanotube (SWNT) thin-film transistor (TFT) structure with a nanomesh network channel has been fabricated from a preseparated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thinfilm display electronics.

Keywords: carbon nanotube, thin-film transistor, solution process, network, nanomesh, highly uniform

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Publication history
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Acknowledgements

Publication history

Received: 16 July 2014
Revised: 22 October 2014
Accepted: 25 October 2014
Published: 01 December 2014
Issue date: April 2015

Copyright

© Tsinghua University Press and Springer‐Verlag Berlin Heidelberg 2014

Acknowledgements

Acknowledgements

This research was supported by the National Research Foundation of Republic of Korea (NRF) grant funded by the Republic of Korea government (Ministry of Education, Science and Technology, MEST) (No. 2013057870), in part by the Educational Research Team for Creative Engineers on Material-Device-Circuit Co-Design under Grant BK21+, in part by the MSD Focus Center Program, and the Office of Naval Research BRC Program.

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