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Nano Research 2015, 8(4): 1210-1221 https://doi.org/10.1007/s12274-014-0602-0
Research Article | Issue | Published: 17 November 2014

Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy

Show Author's Information Namphung Peimyoo1,  Jingzhi Shang1,  Weihuang Yang1,  Yanlong Wang1,  Chunxiao Cong1,  Ting Yu1,2,3( )
Division of Physics and Applied PhysicsSchool of Physical and Mathematical SciencesNanyang Technological University637371Singapore, Singapore
Department of PhysicsFaculty of ScienceNational University of Singapore117542Singapore, Singapore
Graphene Research CenterFaculty of ScienceNational University of Singapore117546Singapore, Singapore
Keywords:
thermal conductivity, temperature dependence, tungsten disulfide, Raman, excitation power
Cite this article:
Peimyoo N, Shang J, Yang W, et al. Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy. Nano Research, 2015, 8(4): 1210-1221. https://doi.org/10.1007/s12274-014-0602-0
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Abstract Full text Electronic supplementary material About this article

We report the thermal conductivities of monolayer (1L) and bilayer (2L) WS2 grown by chemical vapor deposition (CVD), which are determined by use of temperature and excitation dependences of E2g1 and A1g Raman modes. The first-order temperature coefficients of E2g1 and A1g modes in both supported and suspended WS2 layers were extracted. The frequency shift of the A1g mode with temperature is larger than that of the E2g1 mode for 1L-WS2, which is attributed to stronger electron-phonon coupling for the A1g mode than that for the E2g1 mode. Moreover, by use of the shift of the phonon mode induced by laser heating, the thermal conductivities at room temperature were estimated to be 32 and 53 W/(m·K) for 1L- and 2L-WS2, respectively. Our results provide fundamental information about the thermal properties of WS2 layers, which is crucial for developing applications of atomically-thin WS2 devices.


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About this article

Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy

Show Author's information Namphung Peimyoo1, Jingzhi Shang1, Weihuang Yang1, Yanlong Wang1, Chunxiao Cong1, Ting Yu1,2,3( )
Division of Physics and Applied PhysicsSchool of Physical and Mathematical SciencesNanyang Technological University637371Singapore, Singapore
Department of PhysicsFaculty of ScienceNational University of Singapore117542Singapore, Singapore
Graphene Research CenterFaculty of ScienceNational University of Singapore117546Singapore, Singapore

Abstract

We report the thermal conductivities of monolayer (1L) and bilayer (2L) WS2 grown by chemical vapor deposition (CVD), which are determined by use of temperature and excitation dependences of E2g1 and A1g Raman modes. The first-order temperature coefficients of E2g1 and A1g modes in both supported and suspended WS2 layers were extracted. The frequency shift of the A1g mode with temperature is larger than that of the E2g1 mode for 1L-WS2, which is attributed to stronger electron-phonon coupling for the A1g mode than that for the E2g1 mode. Moreover, by use of the shift of the phonon mode induced by laser heating, the thermal conductivities at room temperature were estimated to be 32 and 53 W/(m·K) for 1L- and 2L-WS2, respectively. Our results provide fundamental information about the thermal properties of WS2 layers, which is crucial for developing applications of atomically-thin WS2 devices.

Keywords: thermal conductivity, temperature dependence, tungsten disulfide, Raman, excitation power

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Publication history
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Acknowledgements

Publication history

Received: 13 August 2014
Revised: 29 September 2014
Accepted: 02 October 2014
Published: 17 November 2014
Issue date: April 2015

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014

Acknowledgements

Acknowledgements

This work is supported by the Singapore National Research Foundation under NRF RF award (No. NRF-RF2010-07), MOE Tier 2 (No. MOE2012-T2-2-049) and A*Star SERC PSF grant (No. 1321202101).

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