Contactless probing of the intrinsic carrier transport in single-walled carbon nanotubes
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Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes: The contactless dielectric force microscopy (DFM) technique and the conventional field-effect transistor (FET) method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.
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Contactless probing of the intrinsic carrier transport in single-walled carbon nanotubes
)
Abstract
Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes: The contactless dielectric force microscopy (DFM) technique and the conventional field-effect transistor (FET) method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (Nos. 91233104 and 61376063) and the National Basic Research Program of China (No. 2010CB934700). L. C. acknowledges the support from Jiangsu Provincial Natural Science Foundation (Grant No. BK20130006). The device fabrication and transport measurement were performed at the Nanofabrication Facility and Nano characterization Facility at Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences. We thank Y. Wang, K. Hou, Y. Dong, B. Li, F. Tian, T. Zhou, and K. Huang for technical supports.
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