Journal Home > Volume 7 , Issue 11
Nano Research 2014, 7(11): 1592-1603 https://doi.org/10.1007/s12274-014-0519-7
Research Article | Issue | Published: 21 August 2014

Fabrication and properties of well-ordered arrays of single-crystalline NiSi2 nanowires and epitaxial NiSi2/Si heterostructures

Show Author's Information Chenfu Chuang,  Shaoliang Cheng( )
Department of Chemical and Materials EngineeringCentral University, Chung-Li CityTaoyuan32001
Keywords:
wettability, nanosphere lithography, Si nanowire, field emission, NiSi2 nanowire
Cite this article:
Chuang C, Cheng S. Fabrication and properties of well-ordered arrays of single-crystalline NiSi2 nanowires and epitaxial NiSi2/Si heterostructures. Nano Research, 2014, 7(11): 1592-1603. https://doi.org/10.1007/s12274-014-0519-7
Download citation
EndNote(RIS)
BibTeX

519

Views

22

Downloads

Citations

10

Crossref

N/A

WoS

10

Scopus

0

CSCD

Abstract Full text Electronic supplementary material About this article

In this study, we reported the design, fabrication, and characterization of wellordered arrays of vertically-aligned, epitaxial NiSi2/Si heterostructures and single-crystalline NiSi2 nanowires on (001)Si substrates. The epitaxial NiSi2 with {111} facets was found to be the first and the only silicide phase formed inside the Si nanowires after annealing at a temperature as low as 300 ℃. Upon annealing at 500 ℃ for 4 h, the residual parts of Si nanowires were completely consumed and the NiSi2/Si heterostructured nanowires were transformed to fully silicided NiSi2 nanowires. XRD, TEM and SAED analyses indicated that all the NiSi2 nanowires were single crystalline and their axial orientations were parallel to the [001] direction. The obtained vertically-aligned NiSi2 nanowires, owing to their well-ordered arrangement, single-crystalline structure, and low effective work function, exhibit excellent field-emission properties with a very low turn-on field of 1.1 V/m. The surface wettability of the nanowires was found to switch from hydrophobic to hydrophilic after the formation of NiSi2 phase and the measured water contact angle decreased with increasing extent of Ni silicidation. The increased hydrophilicity can be explained by the Wenzel model. The obtained results present the exciting prospect that the new approach proposed here will provide the capability to fabricate other highly-ordered, vertically-aligned fully silicided nanowire arrays and may offer potential applications in constructing vertical silicide-based nanodevices.


menu
Abstract
Full text
Outline
Electronic supplementary material
About this article

Fabrication and properties of well-ordered arrays of single-crystalline NiSi2 nanowires and epitaxial NiSi2/Si heterostructures

Show Author's information Chenfu Chuang, Shaoliang Cheng( )
Department of Chemical and Materials EngineeringCentral University, Chung-Li CityTaoyuan32001

Abstract

In this study, we reported the design, fabrication, and characterization of wellordered arrays of vertically-aligned, epitaxial NiSi2/Si heterostructures and single-crystalline NiSi2 nanowires on (001)Si substrates. The epitaxial NiSi2 with {111} facets was found to be the first and the only silicide phase formed inside the Si nanowires after annealing at a temperature as low as 300 ℃. Upon annealing at 500 ℃ for 4 h, the residual parts of Si nanowires were completely consumed and the NiSi2/Si heterostructured nanowires were transformed to fully silicided NiSi2 nanowires. XRD, TEM and SAED analyses indicated that all the NiSi2 nanowires were single crystalline and their axial orientations were parallel to the [001] direction. The obtained vertically-aligned NiSi2 nanowires, owing to their well-ordered arrangement, single-crystalline structure, and low effective work function, exhibit excellent field-emission properties with a very low turn-on field of 1.1 V/m. The surface wettability of the nanowires was found to switch from hydrophobic to hydrophilic after the formation of NiSi2 phase and the measured water contact angle decreased with increasing extent of Ni silicidation. The increased hydrophilicity can be explained by the Wenzel model. The obtained results present the exciting prospect that the new approach proposed here will provide the capability to fabricate other highly-ordered, vertically-aligned fully silicided nanowire arrays and may offer potential applications in constructing vertical silicide-based nanodevices.

Keywords: wettability, nanosphere lithography, Si nanowire, field emission, NiSi2 nanowire

References(54)

1

Xiao, Q. F.; Cai, M.; Balogh, M. P.; Tessema, M. M.; Lu, Y. F. Symmetric growth of Pt ultrathin nanowires from dumbbell nuclei for use as oxygen reduction catalysts. Nano Res. 2012, 5, 145–151.
DOI Google Scholar
2

Liang, W. J.; Rabin, O.; Hochbaum, A. I.; Fardy, M.; Zhang, M. J.; Yang, P. D. Thermoelectric properties of p-type PbSe nanowires. Nano Res. 2009, 2, 394–399.
DOI Google Scholar
3

Chen, S. Y.; Yeh, P. H.; Wu, W. W.; Chen, U. S.; Chueh, Y. L.; Yang, Y. C.; Gwo, S.; Chen, L. J. Low resistivity metal silicide nanowires with extraordinarily high aspect ratio for future nanoelectronic devices. ACS Nano 2011, 5, 9202–9207.
DOI Google Scholar
4

Kohandehghan, A.; Kalisvaart, P.; Kupsta, M.; Zahiri, B.; Amirkhiz, B. S.; Li, Z. P.; Memarzadeh, E. L.; Bendersky, L. A.; Mitlin, D. Magnesium and magnesium-silicide coated silicon nanowire composite anodes for lithium-ion batteries. J. Mater. Chem. A 2013, 1, 1600–1612.
DOI Google Scholar
5

Lin, Y. C.; Lu, K. C.; Wu, W. W.; Bai, J. W.; Chen, L. J.; Tu, K. N.; Huang, Y. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices. Nano Lett. 2008, 8, 913–918.
DOI Google Scholar
6

Wu, Y.; Xiang, J.; Yang, C.; Lu, W.; Lieber, C. M. Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures. Nature 2004, 430, 61–65.
DOI Google Scholar
7

Dasgupta, N. P.; Xu, S. C.; Jung, H. J.; Iancu, A.; Fasching, R.; Sinclair, R.; Prinz, F. B. Nickel silicide nanowire arrays for anti-reflective electrodes in photovoltaics. Adv. Funct. Mater. 2012, 22, 3650–3657.
DOI Google Scholar
8

Schmitt, A. L.; Higgins, J. M.; Szczech, J. R.; Jin, S. Synthesis and applications of metal silicide nanowires. J. Mater. Chem. 2010, 20, 223–235.
DOI Google Scholar
9

Kim, J.; Anderson, W. A. Direct electrical measurement of the self-assembled nickel silicide nanowire. Nano Lett. 2006, 6, 1356–1359.
DOI Google Scholar
10

Yuan, F. W.; Wang, C. Y.; Li, G. A; Chang, S. H.; Chu, L. W.; Chen, L. J.; Tuan, H. Y. Solution-phase synthesis of single-crystal Cu3Si nanowire arrays on diverse substrates with dual functions as high-performance field emitters and efficient anti-reflective layers. Nanoscale 2013, 5, 9875–9881.
DOI Google Scholar
11

Valentín, L. A.; Carpena-Nuñez, J.; Yang, D.; Fonseca, L. F. Field emission properties of single crystal chromium disilicide nanowires. J. Appl. Phys. 2013, 113, 014308.
DOI Google Scholar
12

Chen, S. Y.; Chen, L. J. Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy. Thin Solid Films 2006, 508, 222–225.
DOI Google Scholar
13

Liang, S.; Islam, R.; Smith, D. J.; Bennett, P. A. Phase transformation in FeSi2 nanowires. J. Cryst. Growth 2006, 295, 166–171.
DOI Google Scholar
14

He, Z. A.; Stevens, M.; Smith, D. J.; Bennett, P. A. Epitaxial titanium silicide islands and nanowires. Surf. Sci. 2003, 524, 148–156.
DOI Google Scholar
15

Kim, D. J.; Seol, J. K.; Lee, M. R.; Hyung, J. H.; Kim, G. S.; Ohgai, T.; Lee, S. K. Ferromagnetic nickel silicide nanowires for isolating primary CD4+ T lymphocytes. Appl. Phys. Lett. 2012, 100, 163703–163706.
DOI Google Scholar
16

Liu, B. Z.; Wang, Y. F.; Dilts, S.; Mayer, T. S.; Mohney, S. E. Silicidation of silicon nanowires by platinum. Nano Lett. 2007, 7, 818–824.
DOI Google Scholar
17

Szczech, J. R.; Schmitt, A. L.; Bierman, M. J.; Jin, S. Single-crystal semiconducting chromium disilicide nanowires synthesized via chemical vapor transport. Chem. Mater. 2007, 19, 3238–3243.
DOI Google Scholar
18

Szczech, J. R.; Jin, S. Epitaxially-hyperbranched FeSi nanowires exhibiting merohedral twinning. J. Mater. Chem. 2010, 20, 1375–1382.
DOI Google Scholar
19

Song, Y. P.; Schmitt, A. L.; Jin, S. Ultralong single-crystal metallic Ni2Si nanowires with low resistivity. Nano Lett. 2007, 7, 965–969.
DOI Google Scholar
20

Gao, Y.; Zhou, Y. S.; Qian, M.; Xie, Z. Q.; Xiong, W.; Luo, H. F.; Jiang, L.; Lu, Y. F. Fast growth of branched nickel monosilicide nanowires by laser-assisted chemical vapor deposition. Nanotechnology 2011, 22, 235602–235606.
DOI Google Scholar
21

Fan, X.; Zhang, H.; Du, N.; Yang, D. R. Phase-controlled synthesis of nickel silicide nanostructures. Mater. Res. Bull. 2012, 47, 3797–3803.
DOI Google Scholar
22

Kim, J.; Shin, D. H.; Lee, E. S.; Han, C. S.; Park, Y. C. Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition. Appl. Phys. Lett. 2007, 90, 253103.
DOI Google Scholar
23

Liu, C. Y.; Li, W. S.; Chu, L. W.; Lu, M. Y.; Tsai, C. J.; Chen, L. J. An ordered Si nanowire with NiSi2 tip arrays as excellent field emitters. Nanotechnology 2011, 22, 055603.
DOI Google Scholar
24

Han, X. L.; Larrieu, G.; Dubois, E.; Cristiano, F. Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts. Surf. Sci. 2012, 606, 836–839.
DOI Google Scholar
25

Hsu, H. F.; Huang, W. R.; Chen, T. H.; Wu, H. Y.; Chen, C. A. Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction. Nanoscale Res. Lett. 2013, 8, 224–230.
DOI Google Scholar
26

Huang, Z. P.; Fang, H.; Zhu, J. Fabrication of silicon nanowire arrays with controlled diameter, length, and density. Adv. Mater. 2007, 19, 744–748.
DOI Google Scholar
27

Mikhael, B.; Elise, B.; Xavier, M.; Sebastian, S.; Johann, M.; Laetitia, P. New silicon architectures by gold-assisted chemical etching. ACS Appl. Mater. Inter. 2011, 3, 3866–3873.
DOI Google Scholar
28

d'Heurle, F.; Petersson, S. C.; Stolt, L.; Strizker, B. Diffusion in intermetallic compounds with the CaF2 structure: A marker study of the formation of NiSi2 thin films. J. Appl. Phys. 1982, 53, 5678–5681.
DOI Google Scholar
29

Bennett, P. A.; He, Z. A.; Smith, D. J.; Ross, F. M. Endotaxial silicide nanowires: A review. Thin Solid Films 2011, 519, 8434–8440.
DOI Google Scholar
30

Fujitani, H. First-principles study of the stability of the NiSi2/Si(111) interface. Phys. Rev. B 1998, 57, 8801–8804.
DOI Google Scholar
31

Jiang, S. H.; Xin, Q. Q.; Chen, Y. W.; Lou, H.; Lv, Y. X.; Zeng, W. Preparation of NiSi2 nanowires with low resistivity by reaction between Ni coating and silicon nanowires. Appl. Phys. Express 2009, 2, 075005.
DOI Google Scholar
32

Juliesa, B. A.; Knoesena, D.; Pretoriusb, R.; Adams, D. A study of the NiSi to NiSi2 transition in the Ni-Si binary system. Thin Solid Films 1999, 347, 201–207.
DOI Google Scholar
33

Chen, Y.; Lin, Y. C.; Huang, C. W.; Wang, C. W.; Chen, L. J.; Wu, W. W.; Huang, Y. Kinetic competition model and size-dependent phase selection in 1-D nanostructures. Nano Lett. 2012, 12, 3115–3120.
DOI Google Scholar
34

Chiu, W. L.; Chiu, C. H.; Chen, J. Y.; Huang, C. W.; Huang, Y. T.; Lu, K. C.; Hsin, C. L.; Yeh, P. H.; Wu, W. W. Single-crystalline δ-Ni2Si nanowires with excellent physical properties. Nanoscale Res. Lett. 2013, 8, 290–294.
DOI Google Scholar
35

Kim, C. J.; Kang, K.; Woo, Y. S.; Ryu, K. G.; Moon, H.; Kim, J. M.; Zang, D. S.; Jo, M. H. Spontaneous chemical vapor growth of NiSi nanowires and their metallic properties. Adv. Mater. 2007, 19, 3637–3642.
DOI Google Scholar
36

Kim, J.; Lee, E. S.; Han, C. S.; Kang, Y.; Kim, D.; Anderson, W. A. Observation of Ni silicide formations and field emission properties of Ni silicide nanowires. Microelectron. Eng. 2008, 85, 1709–1712.
DOI Google Scholar
37

Liu, Z. H.; Zhang, H.; Wang, L.; Yang, D. R. Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil. Nanotechnology 2008, 19, 375602.
DOI Google Scholar
38

Lee, S.; Yoon, J.; Koo, B.; Shin, D. H.; Koo, J. H.; Lee, C. J.; Kim, Y. W.; Kim, H.; Lee, T. Formation of vertically-aligned cobalt silicide nanowire arrays through a solid-state reaction. Nanotechnol. IEEE Trans. 2013, 12, 704–711.
DOI Google Scholar
39

Lu, C. M.; Hsu, H. F.; Lu, K. C. Growth of single-crystalline cobalt silicide nanowires and their field emission property. Nanoscale Res. Lett. 2013, 8, 308–313.
DOI Google Scholar
40

Liang, Y. H.; Yu, S. Y.; Hsin, C. L.; Huang, C. W.; Wu, W. W. Growth of single-crystalline cobalt silicide nanowires with excellent physical properties. J. Appl. Phys. 2011, 110, 074302.
DOI Google Scholar
41

Lin, H. K.; Tzeng, Y. F.; Wang, C. H.; Tai, N. H.; Lin, I. N.; Lee, C. Y.; Chiu, H. T. Ti5Si3 nanowire and its field emission property. Chem. Mater. 2008, 20, 2429–2431.
DOI Google Scholar
42

Xiang, B.; Wang, Q. X.; Wang, Z.; Zhang, X. Z.; Liu, L. Q.; Xu, J.; Yu, D. P. Synthesis and field emission properties of TiSi2 nanowires. Appl. Phys. Lett. 2005, 86, 243103–243106.
DOI Google Scholar
43

Lin, H. K.; Cheng, H. A.; Lee, C. Y.; Chiu, H. T. Chemical vapor deposition of TiSi nanowires on C54 TiSi2 thin film: An amorphous titanium silicide interlayer assisted nanowire growth. Chem. Mater. 2009, 21, 5388–5396.
DOI Google Scholar
44

Fang, X. S.; Bando, Y.; Gautam, U. K.; Ye, C. H.; Golberg, D. Inorganic semiconductor nanostructures and their field-emission applications. J. Mater. Chem. 2008, 18, 509–522.
DOI Google Scholar
45

Araki, H.; Katayama, T.; Yoshino, K. Field emission from aligned carbon nanotubes prepared by thermal chemical vapor deposition of Fe-phthalocyanine. Appl. Phys. Lett. 2001, 79, 2636–2639.
DOI Google Scholar
46

Wu, S. L.; Deng, J. H.; Zhang, T.; Zheng, R. T.; Cheng, G. A. Tunable synthesis of carbon nanosheet/silicon nanowire hybrids for field emission applications. Diam. Relat. Mater. 2012, 26, 83–88.
DOI Google Scholar
47

Deng, J. H.; Yu, B.; Li, G. Z.; Hou, X. G.; Zhao, M. L.; Li, D. J.; Ting, R. Z.; Cheng, G. A. Self-assembled growth of multi-layer graphene on planar and nanostructured substrates and its field emission properties. Nanoscale 2013, 5, 12388–12393.
DOI Google Scholar
48

Ahmad, M.; Rasool, K.; Rafiq, M. A.; Hasan, M. M. Enhanced and persistent photoconductivity in vertical silicon nanowires and ZnS nanoparticles hybrid devices. Appl. Phys. Lett. 2012, 101, 223103.
DOI Google Scholar
49

Li, Y.; Li, C. C.; Cho, S. O.; Duan, G. T.; Cai, W. P. Silver hierarchical bowl-like array: Synthesis, superhydrophobicity, and optical properties. Langmuir 2007, 23, 9802–9807.
DOI Google Scholar
50

Huang, X. J.; Lee, J. H.; Lee, J. W.; Yoon, J. B.; Choi, Y. K. A one-step route to a perfectly ordered wafer-scale microbowl array for size-dependent superhydrophobicity. Small 2008, 4, 211–216.
DOI Google Scholar
51

Wenzel, R. N. Resistance of solid surfaces to wetting by water. Ind. Eng. Chem. 1936, 28, 988–994.
DOI Google Scholar
52

Wenzel, R. N. Surface roughness and contact angle. J. Phys. Colloid Chem. 1949, 53, 1466–1467.
DOI Google Scholar
53

Extrand, C. W. Contact angles and hysteresis on surfaces with chemically heterogeneous islands. Langmuir 2003, 19, 3793–3796.
DOI Google Scholar
54

Wang, J. H.; Bratko, D.; Luzar, A. Probing surface tension additivity on chemically heterogeneous surfaces by a molecular approach. Proc. Natl. Acad. Sci. USA 2011, 108, 6374–6379.
DOI Google Scholar
File
12274_2014_519_MOESM1_ESM.pdf (267.4 KB)
Publication history
Copyright
Acknowledgements

Publication history

Received: 10 February 2014
Revised: 09 June 2014
Accepted: 19 June 2014
Published: 21 August 2014
Issue date: November 2014

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014

Acknowledgements

Acknowledgement

The research was supported by the Ministry of Science and Technology.

Return