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Nano Research 2014, 7(8): 1137-1145 https://doi.org/10.1007/s12274-014-0476-1
Research Article | Issue | Published: 28 June 2014

Selective and localized laser annealing effect for high-performance flexible multilayer MoS2 thin-film transistors

Show Author's Information Hyukjun Kwon1,§,  Woong Choi2,§,  Daeho Lee1,3,  Yunsung Lee4,  Junyeon Kwon4,  Byungwook Yoo5,  Costas P. Grigoropoulos1( ),  Sunkook Kim4( )
Department of Mechanical Engineering University of California Berkeley CA 94720-1740 USA
School of Advanced Materials Engineering Kookmin University Seoul 136-702 South Korea
Department of Mechanical EngineeringGachon UniversitySeongnam-siGyeonggi461-701South Korea
Department of Electronics and Radio EngineeringKyung Hee UniversityGyeonggi446-701South Korea
Flexible Display Research CenterKorea Electronics Technology InstituteSeongnamGyeonggi463-816South Korea

§ These authors contributed equally to this publication.

Keywords:
MoS2, flexible electronics, transition metal, dichalcogenides, thin-film transistors, laser annealing
Cite this article:
Kwon H, Choi W, Lee D, et al. Selective and localized laser annealing effect for high-performance flexible multilayer MoS2 thin-film transistors. Nano Research, 2014, 7(8): 1137-1145. https://doi.org/10.1007/s12274-014-0476-1
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Abstract Full text Electronic supplementary material About this article

We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors (FETs) on flexible plastic substrates without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible poly(ethylene naphthalate) (PEN) substrates with low thermal budget (< 200 ℃). The reduced contact resistance after laser annealing provided a significant improvement in transistor performance including higher peak field-effect mobility (from 24.84 to 44.84 cm2·V-1·s-1), increased output resistance (0.42 MΩ at Vgs - Vth = 20 V, a three-fold increase), a six-fold increase in the self-gain, and decreased sub-threshold swing. Transmission electron microscopy analysis and current-voltage measurements suggested that the reduced contact resistance resulted from the decrease of Schottky barrier width at the MoS2-metal junction. These results demonstrate that selective contact laser annealing is an attractive technology for fabricating low-resistivity metal-semiconductor junctions, providing important implications for the application of high-performance two-dimensional semiconductor FETs in flexible electronics.


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About this article

Selective and localized laser annealing effect for high-performance flexible multilayer MoS2 thin-film transistors

Show Author's information Hyukjun Kwon1,§, Woong Choi2,§, Daeho Lee1,3, Yunsung Lee4, Junyeon Kwon4, Byungwook Yoo5, Costas P. Grigoropoulos1( ), Sunkook Kim4( )
Department of Mechanical Engineering University of California Berkeley CA 94720-1740 USA
School of Advanced Materials Engineering Kookmin University Seoul 136-702 South Korea
Department of Mechanical EngineeringGachon UniversitySeongnam-siGyeonggi461-701South Korea
Department of Electronics and Radio EngineeringKyung Hee UniversityGyeonggi446-701South Korea
Flexible Display Research CenterKorea Electronics Technology InstituteSeongnamGyeonggi463-816South Korea

§ These authors contributed equally to this publication.

Abstract

We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors (FETs) on flexible plastic substrates without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible poly(ethylene naphthalate) (PEN) substrates with low thermal budget (< 200 ℃). The reduced contact resistance after laser annealing provided a significant improvement in transistor performance including higher peak field-effect mobility (from 24.84 to 44.84 cm2·V-1·s-1), increased output resistance (0.42 MΩ at Vgs - Vth = 20 V, a three-fold increase), a six-fold increase in the self-gain, and decreased sub-threshold swing. Transmission electron microscopy analysis and current-voltage measurements suggested that the reduced contact resistance resulted from the decrease of Schottky barrier width at the MoS2-metal junction. These results demonstrate that selective contact laser annealing is an attractive technology for fabricating low-resistivity metal-semiconductor junctions, providing important implications for the application of high-performance two-dimensional semiconductor FETs in flexible electronics.

Keywords: MoS2, flexible electronics, transition metal, dichalcogenides, thin-film transistors, laser annealing

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Publication history
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Acknowledgements

Publication history

Received: 25 November 2013
Revised: 09 April 2014
Accepted: 14 April 2014
Published: 28 June 2014
Issue date: August 2014

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014

Acknowledgements

Acknowledgements

This research was supported by the National Research Foundation of Korea (No. NRF-2013K1A3A1A32035549), a grant (No. KHU-20121643) from Kyung Hee University, and the Industrial Strategic Technology Development Program (No. 10045145). H. J. K., D. L., and C. P. G. gratefully acknowledge the US Air Force Office of Scientific Research AFOSR/AOARD under Grant No. FA2386-13-4123. W. C. acknowledges the financial support of the New Faculty Research Program 2012 of Kookmin University in Korea and the National Research Foundation of Korea (Nos. NRF2013R1A1A2008191 and NRF-2013K1A4A3055679).

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