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Research Article

Bivariate-continuous-tunable interface memristor based on Bi2S3 nested nano-networks

Ye Tian1,2Chuangfei Guo3Shengming Guo1Taifung Yu5Qian Liu1,4( )
National Center for Nanoscience and Technology (NCNST)China. No.11BeiyitiaoZhongguancunBeijing100190China
Hunan City UniversityYiyangHunan413000China
Department of PhysicsBoston CollegeChestnut HillMA02467USA
Taida Applied Physics SchoolNankai UniversityTianjin300457China
Department of PhysicsThe University of Hong KongPokfulam RoadHong Kong SARChina
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Abstract

A memristor that can emulate biological synapses is a promising basic-processing unit in neural-network computation. Here we propose a new-conceptual memristor based on a memoristive interface composed of two types of non-memristive materials, successfully realizing continuously tunable resistance controlled by both voltage (current) and applied time of a single pulse with a swift response comparable with synapses. The brain-like memorizing capability of the memristor is demonstrated. The memoristive mechanism in the interface is thought to be dominated by a Schottky barrier tuned by the capture/release of the carriers in interface traps with dispersive energy.

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Nano Research
Pages 953-962

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Cite this article:
Tian Y, Guo C, Guo S, et al. Bivariate-continuous-tunable interface memristor based on Bi2S3 nested nano-networks. Nano Research, 2014, 7(7): 953-962. https://doi.org/10.1007/s12274-014-0456-5

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Received: 12 December 2013
Revised: 18 March 2014
Accepted: 21 March 2014
Published: 09 June 2014
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014