Journal Home > Volume 7 , Issue 1

Arrays of chemical vapor sensors based on graphene field effect transistors functionalized with single-stranded DNA have been demonstrated. Standard photolithographic processing was adapted for use on large-area graphene by including a metal protection layer, which protected the graphene from contamination and enabled fabrication of high quality field-effect transistors (GFETs). Processed graphene devices had hole mobilities of 1, 640 ± 250 cm2·V–1·s–1 and Dirac voltages of 15 ± 10 V under ambient conditions. Atomic force microscopy was used to verify that the graphene surface remained uncontaminated and therefore suitable for controlled chemical functionalization. Single-stranded DNA was chosen as the functionalization layer due to its affinity to a wide range of target molecules and π–π stacking interaction with graphene, which led to minimal degradation of device characteristics. The resulting sensor arrays showed analyte-and DNA sequence-dependent responses down to parts-per-billion concentrations. DNA/GFET sensors were able to differentiate among chemically similar analytes, including a series of carboxylic acids, and structural isomers of carboxylic acids and pinene. Evidence for the important role of electrostatic chemical gating was provided by the observation of understandable differences in the sensor response to two compounds that differed only by the replacement of a (deprotonating) hydroxyl group by a neutral methyl group. Finally, target analytes were detected without loss of sensitivity in a large background of a chemically similar, volatile compound. These results motivate further development of the DNA/graphene sensor family for use in an electronic olfaction system.


menu
Abstract
Full text
Outline
Electronic supplementary material
About this article

Scalable arrays of chemical vapor sensors based on DNA-decorated graphene

Show Author's information Nicholas J. Kybert1Gang Hee Han1Mitchell B. Lerner1,Eric N. Dattoli1Ali Esfandiar1A.T. Charlie Johnson1( )
Department of Physics and Astronomy University of PennsylvaniaPhiladelphia PA 19104 USA

Present address: SPAWAR Systems Center Pacific, San Diego, CA 92152, USA

Abstract

Arrays of chemical vapor sensors based on graphene field effect transistors functionalized with single-stranded DNA have been demonstrated. Standard photolithographic processing was adapted for use on large-area graphene by including a metal protection layer, which protected the graphene from contamination and enabled fabrication of high quality field-effect transistors (GFETs). Processed graphene devices had hole mobilities of 1, 640 ± 250 cm2·V–1·s–1 and Dirac voltages of 15 ± 10 V under ambient conditions. Atomic force microscopy was used to verify that the graphene surface remained uncontaminated and therefore suitable for controlled chemical functionalization. Single-stranded DNA was chosen as the functionalization layer due to its affinity to a wide range of target molecules and π–π stacking interaction with graphene, which led to minimal degradation of device characteristics. The resulting sensor arrays showed analyte-and DNA sequence-dependent responses down to parts-per-billion concentrations. DNA/GFET sensors were able to differentiate among chemically similar analytes, including a series of carboxylic acids, and structural isomers of carboxylic acids and pinene. Evidence for the important role of electrostatic chemical gating was provided by the observation of understandable differences in the sensor response to two compounds that differed only by the replacement of a (deprotonating) hydroxyl group by a neutral methyl group. Finally, target analytes were detected without loss of sensitivity in a large background of a chemically similar, volatile compound. These results motivate further development of the DNA/graphene sensor family for use in an electronic olfaction system.

Keywords: graphene, vapor sensor, DNA, photolithography, chemical gating

References(23)

1

Reina, A.; Jia, X. T.; Ho, J.; Nezich, D.; Son, H. B.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. Nano Lett. 2009, 9, 30–35.

2

Li, X. S.; Cai, W. W.; An, J.; Kim, S.; Nah, J.; Yang, D. X.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E., et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 2009, 324, 1312–1314.

3

Luo, Z. T.; Lu, Y.; Singer, D. W.; Berck, M. E.; Somers, L. A.; Goldsmith, B. R.; Johnson, A. T. C. Effect of substrate roughness and feedstock concentration on growth of wafer-scale graphene at atmospheric pressure. Chem. Mater. 2011, 23, 1441–1447.

4

Pirkle, A.; Chan, J.; Venugopal, A.; Hinojos, D.; Magnuson, C. W.; McDonnell, S.; Colombo, L.; Vogel, E. M.; Ruoff, R. S.; Wallace, R. M. The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2. Appl. Phys. Lett. 2011, 99, 122108.

5

Kumar, S.; Peltekis, N.; Lee, K.; Kim, H. Y.; Duesberg, G. S. Reliable processing of graphene using metal etchmasks. Nanoscale Res. Lett. 2011, 6, 390.

6

Ishigami, M.; Chen, J. H.; Cullen, W. G.; Fuhrer, M. S.; Williams, E. D. Atomic structure of graphene on SiO2. Nano Lett. 2007, 7, 1643–1648.

7

Ohno, Y.; Maehasi, K.; Matsumoto, K. Label-free biosensors based on aptamer-modified graphene field-effect transistors. J. Am. Chem. Soc. 2010, 132, 18012–18013.

8

Dan, Y. P.; Lu, Y.; Kybert, N. J.; Luo, Z. T.; Johnson, A. T. C. Intrinsic response of graphene vapor sensors. Nano Lett. 2009, 9, 1472–1475.

9

Lu, Y.; Goldsmith, B. R.; Kybert, N. J.; Johnson, A. T. C. DNA-decorated graphene chemical sensors. Appl. Phys. Lett. 2010, 97, 083107.

10

Safron, N. S.; Kim, M.; Gopalan, P.; Arnold, M. S. Barrier-guided growth of micro-and nano-structured graphene. Adv. Mater. 2012, 24, 1041–1045.

11

Burg, B. R.; Poulikakos, D. Large-scale integration of single-walled carbon nanotubes and graphene into sensors and devices using dielectrophoresis: A review. J. Mater. Res. 2011, 26, 1561–1571.

12

Li, P. F.; Lei, N.; Xu, J.; Xue, W. High-yield fabrication of graphene chemiresistors with dielectrophoresis. IEEE T. Nanotechnol. 2012, 11, 751–759.

13

Liang, X. L.; Sperling, B. A.; Calizo, I.; Cheng, G. J.; Hacker, C. A.; Zhang, Q.; Obeng, Y.; Yan, K.; Peng, H. L.; Li, Q. L., et al. Toward clean and crackless transfer of graphene. ACS Nano 2011, 5, 9144–9153.

14

Goossens, A. M.; Calado, V. E.; Barreiro, A.; Watanabe, K.; Taniguchi, T.; Vandersypen, L. M. K. Mechanical cleaning of graphene. Appl. Phys. Lett. 2012, 100, 073110.

15

Nagashio, K.; Yamashita, T.; Nishimura, T.; Kita, K.; Toriumi, A. Electrical transport properties of graphene on SiO2 with specific surface structures. J. Appl. Phys. 2011, 110, 024513.

16

Liao, L.; Bai, J. W.; Qu, Y. Q.; Lin, Y. C.; Li, Y. J.; Huang, Y.; Duan, X. F. High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors. Proc. Natl. Acad. Sci. U. S. A. 2010, 107, 6711–6715.

17

Lerner, M. B.; Resczenski, J. M.; Amin, A.; Johnson, R. R.; Goldsmith, J. I.; Johnson, A. T. C. Toward quantifying the electrostatic transduction mechanism in carbon nanotube molecular sensors. J. Am. Chem. Soc. 2012, 134, 14318– 14321.

18

Kybert, N. J.; Lerner, M. B.; Yodh, J. S.; Preti, G.; Johnson, A. T. C. Differentiation of complex vapor mixtures using versatile DNA–carbon nanotube chemical sensor arrays. ACS Nano 2013, 7, 2800–2807.

19

Staii, C.; Johnson, A. T.; Chen, M.; Gelperin, A. DNA-decorated carbon nanotubes for chemical sensing. Nano Lett. 2005, 5, 1774–1778.

20

Hill, A. The possible effects of the aggregation of the molecules of hemoglobin on its oxygen dissociation curve. J. Physiol. 1910, 40, 4–7.

21

Abboud, J. L. M.; Notario, R. Critical compilation of scales of solvent parameters. Part I. Pure, non-hydrogen bond donor solvents. Pure Appl. Chem. 1999, 71, 645–718.

22

Gao, L. B.; Ren, W. C.; Xu, H. L.; Jin, L.; Wang, Z. X.; Ma, T.; Ma, L. P.; Zhang, Z. Y.; Fu, Q.; Peng, L. M., et al. Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum. Nat. Commun. 2012, 3, 699.

23

Khamis, S. M.; Jones, R. A.; Johnson, A. T. C. Optimized photolithographic fabrication process for carbon nanotube devices. AIP Adv. 2011, 1, 022106.

File
nr-7-1-95_ESM.pdf (805.5 KB)
Publication history
Copyright
Acknowledgements

Publication history

Received: 21 July 2013
Revised: 26 August 2013
Accepted: 12 October 2013
Published: 11 November 2013
Issue date: January 2014

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2013

Acknowledgements

Acknowledgements

This research was supported by the Nano/Bio Interface Center through the National Science Foundation Nanoscale Science and Engineering Center (NSEC) DMR08-32802, and the work involved use of its facilities. Support from Lockheed Martin is also gratefully acknowledged. M.L. acknowledges the support of the Science, Mathematics, And Research for Transformation (SMART) Fellowship.

Return