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Research Article

In situ Raman spectroscopy of topological insulator Bi2Te3 films with varying thickness

Chunxiao Wang1,2Xiegang Zhu1Louis Nilsson3Jing Wen1Guang Wang1Xinyan Shan1Qing Zhang1Shulin Zhang2( )Jinfeng Jia1,4( )Qikun Xue1
State Key Laboratory for Low-Dimensional Quantum PhysicsDepartment of PhysicsTsinghua UniversityBeijing100084China
Department of PhysicsPeking UniversityBeijing100871China
Department of Physics and Astronomy and Interdisciplinary Nanoscience CenterAarhus University8000Aarhus C, Denmark
Department of PhysicsShanghai Jiaotong UniversityShanghai200240China
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Abstract

Topological insulators (TIs) are a new state of quantum matter with a band gap in bulk and conducting surface states. In this work, the Raman spectra of topological insulator Bi2Te3 films prepared by molecular beam epitaxy (MBE) have been measured by an in situ ultrahigh vacuum (UHV)-MBE-Raman spectroscopy system. When the thickness of Bi2Te3 films decreases from 40 quintuple-layers (QL) to 1 QL, the spectral characteristics of some Raman modes appearing in bulk Bi2Te3 vary and a new vibrational mode appears, which has not been reported in previous studies and might be related to quantum size effects and symmetry breaking. In addition, an obvious change was observed at 3 QL when a Dirac cone formed. These results offer some new information about the novel quantum states of TIs.

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Nano Research
Pages 688-692
Cite this article:
Wang C, Zhu X, Nilsson L, et al. In situ Raman spectroscopy of topological insulator Bi2Te3 films with varying thickness. Nano Research, 2013, 6(9): 688-692. https://doi.org/10.1007/s12274-013-0344-4

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Received: 28 April 2013
Revised: 18 June 2013
Accepted: 24 June 2013
Published: 11 July 2013
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2013
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