Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output
),
Larysa Baraban1(
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We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 μA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel array, the yield of functioning transistors is dramatically increased and deviceto-device variability is reduced compared to single devices. This new nanowirebased platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes (LEDs), while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.
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Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output
), Larysa Baraban1(
),
Abstract
We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 106. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 μA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel array, the yield of functioning transistors is dramatically increased and deviceto-device variability is reduced compared to single devices. This new nanowirebased platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes (LEDs), while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.
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Acknowledgements
We acknowledge support from the European Union (European Social Fund) and the Free State of Saxony (Sächsische Aufbaubank) in the young researcher group "InnovaSens" (SAB-Nr. 080942409) and from the German Excellence Initiative via the Cluster of Excellence 1056 "Center for Advancing Electronics Dresden" (cfAED). G. C. further acknowledges the World Class University program sponsored by the South Korean Ministry of Education, Science, and Technology Program, Project No. R31-2008-000-10100-0. We thank A. Jahn, Ali Ghaemi, and Nora Haufe from TU Dresden and I. Mönch from IFW Dresden for helpful discussions and assistance in the experimental procedures.
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