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Research Article

Highly defective graphene: A key prototype of two-dimensional Anderson insulators

Aurélien Lherbier1( )Stephan Roche2,3Oscar A. Restrepo4Yann-Michel Niquet5Arnaud Delcorte4Jean-Christophe Charlier1
Université catholique de Louvain (UCL) Institute of Condensed Matter and Nanoscience (IMCN) NAPS-ETSF, Chemin des étoiles 8Louvain-la-Neuve 1348 Belgium
CIN2 (ICN-CSIC) and Universitat Autónoma de Barcelona Catalan Institute of Nanotechnology, Campus UABBellaterra (Barcelona) 08193 Spain
ICREA Institució Catalana de Recerca i Estudis AvançatsBarcelona 08070 Spain
Université catholique de Louvain (UCL) Institute of Condensed Matter and Nanoscience (IMCN), BSMA, Place Croix du Sud 1 (Boltzmann)Louvain-la-Neuve 1348 Belgium
L_Sim, SP2M, UMR-E CEA/UJF-Grenoble 1 INAC, 17 rue des MartyrsGrenoble Cedex 9 38054 France
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Abstract

Electronic structure and transport properties of highly defective two-dimensional (2D) sp2 graphene are investigated theoretically. Classical molecular dynamics are used to generate large graphene planes containing a considerable amount of defects. Then, a tight-binding Hamiltonian validated by ab initio calculations is constructed in order to compute quantum transport within a real-space order-N Kubo–Greenwood approach. In contrast to pristine graphene, the highly defective sp2 carbon sheets exhibit a high density of states at the charge neutrality point raising challenging questions concerning the electronic transport of associated charge carriers. The analysis of the electronic wavepacket dynamics actually reveals extremely strong multiple scattering effects giving rise to mean free paths as low as 1 nm and localization phenomena. Consequently, highly defective graphene is envisioned as a remarkable prototype of 2D Anderson insulating materials.

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Nano Research
Pages 326-334

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Cite this article:
Lherbier A, Roche S, Restrepo OA, et al. Highly defective graphene: A key prototype of two-dimensional Anderson insulators. Nano Research, 2013, 6(5): 326-334. https://doi.org/10.1007/s12274-013-0309-7

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Received: 03 December 2012
Revised: 15 March 2013
Accepted: 16 March 2013
Published: 12 April 2013
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2013