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Nano Research 2012, 5(10): 739-746 https://doi.org/10.1007/s12274-012-0260-z
Research Article | Issue | Published: 29 September 2012

Anomalous Anisotropic Magnetoresistance in Topological Insulator Films

Show Author's Information Jian Wang1,2( ),  Handong Li3,4,  Cuizu Chang5,6,  Ke He5,  Joon Sue Lee2,  Haizhou Lu3,  Yi Sun1,  Xucun Ma5,  Nitin Samarth2,  Shunqing Shen3,  Qikun Xue5,6,  Maohai Xie3,  Moses H. W. Chan2( )
International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
The Center for Nanoscale Science and Department of PhysicsThe Pennsylvania State University, University ParkPennsylvania16802-6300USA
Physics DepartmentThe University of Hong Kong, Pokfulam RoadHong KongChina
State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of China, ChengduSichuan610054China
Institute of PhysicsChinese Academy of SciencesBeijing100190China
Department of PhysicsTsinghua UniversityBeijing100084China
Keywords:
low temperature, Topological insulator, Bi2Se3 film, transport property, magnetoresistance
Cite this article:
Wang J, Li H, Chang C, et al. Anomalous Anisotropic Magnetoresistance in Topological Insulator Films. Nano Research, 2012, 5(10): 739-746. https://doi.org/10.1007/s12274-012-0260-z
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Abstract About this article

Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurements, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films. Interestingly, measurements under an in-plane magnetic field, along and perpendicular to the bias current show anomalous opposite magnetoresistance.

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Publication history

Received: 28 July 2012
Revised: 10 September 2012
Accepted: 13 September 2012
Published: 29 September 2012
Issue date: October 2012

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© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012

Acknowledgements

Acknowledgements

This work was supported by the Penn State Materials Research Science and Engineering Center (MRSEC) under National Science Foundation (NSF) grant No. DMR-0820404, the National Basic Research Program (NBRP) of China (No. 2012CB921300) and National Natural Science Foundation of China (Nos. 11174007 and 91021006), the Research Grant Council of Hong Kong Special Administrative Region under Grant No. HKU 7061/10P, the (China) National Science Foundation and the Ministry of Science and Technology of China. We are grateful to Jainendra Jain, Qingfeng Sun, Zhong Fang, Chaoxing Liu, Xiaoliang Qi, Shoucheng Zhang, Jun Zhu, Mingliang Tian, Xincheng Xie, and Xi Dai for useful discussions.

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