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Nano Research 2012, 5(7): 470-476 https://doi.org/10.1007/s12274-012-0232-3
Research Article | Issue | Published: 22 June 2012

High Crystal Quality Wurtzite-Zinc Blende Heterostructures in Metal-Organic Vapor Phase Epitaxy-Grown GaAs Nanowires

Show Author's Information Sebastian Lehmann1( ),  Daniel Jacobsson1,  Knut Deppert1,  Kimberly A. Dick1,2
Solid State Physics Lund UniversityBox 118 S-221 00 Lund, Sweden
Polymer & Materials Chemistry Lund UniversityBox 124 S-221 00 Lund, Sweden
Keywords:
heterostructure, Nanowires, GaAs, polytypism, metal-organic vapor phase epitaxy (MOVPE)-growth
Cite this article:
Lehmann S, Jacobsson D, Deppert K, et al. High Crystal Quality Wurtzite-Zinc Blende Heterostructures in Metal-Organic Vapor Phase Epitaxy-Grown GaAs Nanowires. Nano Research, 2012, 5(7): 470-476. https://doi.org/10.1007/s12274-012-0232-3
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Abstract Full text About this article

We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 μm-1. The hexagonal cross-sectional wires are terminated by {1010}-type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the {111}-type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures.


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About this article

High Crystal Quality Wurtzite-Zinc Blende Heterostructures in Metal-Organic Vapor Phase Epitaxy-Grown GaAs Nanowires

Show Author's information Sebastian Lehmann1( ), Daniel Jacobsson1, Knut Deppert1, Kimberly A. Dick1,2
Solid State Physics Lund UniversityBox 118 S-221 00 Lund, Sweden
Polymer & Materials Chemistry Lund UniversityBox 124 S-221 00 Lund, Sweden

Abstract

We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 μm-1. The hexagonal cross-sectional wires are terminated by {1010}-type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the {111}-type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures.

Keywords: heterostructure, Nanowires, GaAs, polytypism, metal-organic vapor phase epitaxy (MOVPE)-growth

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Publication history
Copyright
Acknowledgements

Publication history

Received: 06 March 2012
Revised: 09 May 2012
Accepted: 22 May 2012
Published: 22 June 2012
Issue date: July 2012

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012

Acknowledgements

Acknowledgements

S.L. gratefully acknowledges the support by a fellow-ship within the Postdoc-Programme of the German Academic Exchange Service (DAAD). The authors acknowledge financial support from the Nanometer Structure Consortium at Lund University (nmC@LU), the Swedish Research Council (VR), the Swedish Foundation for Strategic Research (SSF), and the Knut and Alice Wallenberg Foundation (KAW). We also thank Magnus Borgström for valuable discussions.

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