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Nano Research 2012, 5(5): 297-306 https://doi.org/10.1007/s12274-012-0210-9
Research Article | Issue | Published: 11 May 2012

Simultaneous Growth Mechanisms for Cu-Seeded InP Nanowires

Show Author's Information Karla Hillerich1( ),  Kimberly A. Dick1,2,  Maria E. Messing1,  Knut Deppert1,  Jonas Johansson1( )
Solid State PhysicsLund UniversityBox 118SE-22100 LundSweden
Polymer and Materials ChemistryLund UniversityBox 124SE-22100 LundSweden
Keywords:
Nanowires, epitaxy, MOCVD, MOVPE, InP, Cu seed particle
Cite this article:
Hillerich K, Dick KA, Messing ME, et al. Simultaneous Growth Mechanisms for Cu-Seeded InP Nanowires. Nano Research, 2012, 5(5): 297-306. https://doi.org/10.1007/s12274-012-0210-9
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Abstract Full text About this article

We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 ℃ and 370 ℃ as reported earlier. In this paper we present the effect of the Ⅴ/Ⅲ ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 ℃. Two regimes can be observed in the investigated range of molar fractions. At high Ⅴ/Ⅲ ratios nanowires grow from a solid Cu2In particle. At low Ⅴ/Ⅲ ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles. We discuss a possible growth mechanism relying on a dynamic interplay between vapor–liquid–solid (VLS) and vapor–solid–solid (VSS) growth. Our results bring us one step closer to the replacement of Au as seed particle material as well as towards a deeper understanding of particle-assisted nanowire growth.


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About this article

Simultaneous Growth Mechanisms for Cu-Seeded InP Nanowires

Show Author's information Karla Hillerich1( ), Kimberly A. Dick1,2, Maria E. Messing1, Knut Deppert1, Jonas Johansson1( )
Solid State PhysicsLund UniversityBox 118SE-22100 LundSweden
Polymer and Materials ChemistryLund UniversityBox 124SE-22100 LundSweden

Abstract

We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 ℃ and 370 ℃ as reported earlier. In this paper we present the effect of the Ⅴ/Ⅲ ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 ℃. Two regimes can be observed in the investigated range of molar fractions. At high Ⅴ/Ⅲ ratios nanowires grow from a solid Cu2In particle. At low Ⅴ/Ⅲ ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles. We discuss a possible growth mechanism relying on a dynamic interplay between vapor–liquid–solid (VLS) and vapor–solid–solid (VSS) growth. Our results bring us one step closer to the replacement of Au as seed particle material as well as towards a deeper understanding of particle-assisted nanowire growth.

Keywords: Nanowires, epitaxy, MOCVD, MOVPE, InP, Cu seed particle

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Publication history
Copyright
Acknowledgements

Publication history

Received: 01 March 2012
Accepted: 08 March 2012
Published: 11 May 2012
Issue date: May 2012

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012

Acknowledgements

Acknowledgements

This work was performed within the Nanometer Structure Consortium at Lund University (nmC@LU) and supported financially by the Swedish Research Council (VR), the Swedish Foundation for Strategic Research (SSF) and the Knut and Alice Wallenberg Foundation (KAW). Furthermore this report is based on a project which was funded by E.ON AG as part of the E.ON International Research Initiative. Responsibility for the content of this publication lies with the authors.

The authors thank Alexander Vogel, Bernhard Mandl and Sebastian Lehmann for valuable discussions, Kristian Storm for the development of the nanowire dimension analysis software, and Oscar Hallbäck and Elvedin Memisevic for measurements of the nanowire dimensions.

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