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Research Article

Densely Aligned Graphene Nanoribbons at ~35 nm Pitch

Liying JiaoLiming XieHongjie Dai( )
Department of ChemistryStanford UniversityStanfordCalifornia94305USA
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Abstract

We demonstrate the fabrication of high-density aligned graphene nanoribbon (GNR) arrays by plasma etching of graphene sheets through a nanomask derived from self-assembled poly (styrene-block-dimethylsiloxane) (PS–PDMS) diblock copolymer films. This approach produces parallel GNR (~12 nm wide) arrays at ~35 nm pitch. Microscopy and polarized Raman spectroscopy are used to reveal the high-degree of alignment of GNRs. Electrical measurements show that parallel GNRs in a 1 μm wide region can deliver ~0.38 mA current at a source–drain bias of 1 V. This novel patterning approach allows for the fabrication of densely aligned GNR arrays on various substrates and could provide a route to large scale integration of GNRs into nanoelectronics, optoelectronics and biosensors.

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Nano Research
Pages 292-296

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Cite this article:
Jiao L, Xie L, Dai H. Densely Aligned Graphene Nanoribbons at ~35 nm Pitch. Nano Research, 2012, 5(4): 292-296. https://doi.org/10.1007/s12274-012-0209-2

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Received: 29 January 2012
Accepted: 08 March 2012
Published: 23 March 2012
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012