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Research Article

Sulfur-Doped Zinc Oxide (ZnO) Nanostars: Synthesis and Simulation of Growth Mechanism

Jinhyun Cho1Qiubao Lin2,3Sungwoo Yang2Jay G. Simmons Jr.2Yingwen Cheng2Erica Lin2Jianqiu Yang2John V. Foreman4Henry O. Everitt4,5Weitao Yang2Jungsang Kim1Jie Liu2 ( )
Department of Electrical and Computer EngineeringFitzpatrick Institute for PhotonicsDuke UniversityDurham, North Carolina27708USA
Department of ChemistryFrench Family Science CenterDuke UniversityDurham, North Carolina27708USA
School of ScienceJimei UniversityXiamen361021China
U.S. Army Aviation and Missile ResearchDevelopment, and Engineering CenterWeapons Sciences DirectorateRedstone ArsenalAL 35898USA
Department of PhysicsDuke UniversityDurhamNC 27708USA
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Abstract

We present a bottom-up synthesis, spectroscopic characterization, and ab initio simulations of star-shaped hexagonal zinc oxide (ZnO) nanowires. The ZnO nanostructures were synthesized by a low-temperature hydrothermal growth method. The cross-section of the ZnO nanowires transformed from a hexagon to a hexagram when sulfur dopants from thiourea [SC(NH2)2] were added into the growth solution, but no transformation occurred when urea (OC(NH2)2) was added. Comparison of the X-ray photoemission and photoluminescence spectra of undoped and sulfur-doped ZnO confirmed that sulfur is responsible for the novel morphology. Large-scale theoretical calculations were conducted to understand the role of sulfur doping in the growth process. The ab initio simulations demonstrated that the addition of sulfur causes a local change in charge distribution that is stronger at the vertices than at the edges, leading to the observed transformation from hexagon to hexagram nanostructures.

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Nano Research
Pages 20-26

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Cite this article:
Cho J, Lin Q, Yang S, et al. Sulfur-Doped Zinc Oxide (ZnO) Nanostars: Synthesis and Simulation of Growth Mechanism. Nano Research, 2012, 5(1): 20-26. https://doi.org/10.1007/s12274-011-0180-3

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Received: 23 June 2011
Revised: 17 October 2011
Accepted: 19 October 2011
Published: 12 November 2011
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011