Journal Home > Volume 4 , Issue 9
Nano Research 2011, 4(9): 817-823 https://doi.org/10.1007/s12274-011-0138-5
Research Article | Issue | Published: 14 June 2011

Optical Properties of Laterally Aligned Si Nanowires for Transparent Electronics Applications

Show Author's Information Dong Hyun Lee1,  Jaeseok Yi1,  Won Woo Lee1,  Ungyu Paik1,2( ),  John A. Rogers3( ),  Won II Park1( )
Division of Materials Science and Engineering Hanyang UniversitySeoul 133-791 Korea
Department of Energy Engineering Hanyang UniversitySeoul 133-791 Korea
Department of Materials Science and Engineering, Department of Chemistry, Department of Mechanical Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research LaboratoryUniversity of Illinois at Urbana-Champaign Urbana Illinois 61801 USA
Keywords:
optical properties, Si nanowire, transparent thin film transistor, finite-difference time-domain (FDTD) modeling
Cite this article:
Lee DH, Yi J, Lee WW, et al. Optical Properties of Laterally Aligned Si Nanowires for Transparent Electronics Applications. Nano Research, 2011, 4(9): 817-823. https://doi.org/10.1007/s12274-011-0138-5
Download citation
EndNote(RIS)
BibTeX

521

Views

15

Downloads

Citations

4

Crossref

N/A

WoS

4

Scopus

0

CSCD

Abstract Full text About this article

We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of ~90% for a NW density of ~20−25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%−95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.


menu
Abstract
Full text
Outline
About this article

Optical Properties of Laterally Aligned Si Nanowires for Transparent Electronics Applications

Show Author's information Dong Hyun Lee1, Jaeseok Yi1, Won Woo Lee1, Ungyu Paik1,2( ), John A. Rogers3( ), Won II Park1( )
Division of Materials Science and Engineering Hanyang UniversitySeoul 133-791 Korea
Department of Energy Engineering Hanyang UniversitySeoul 133-791 Korea
Department of Materials Science and Engineering, Department of Chemistry, Department of Mechanical Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research LaboratoryUniversity of Illinois at Urbana-Champaign Urbana Illinois 61801 USA

Abstract

We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of ~90% for a NW density of ~20−25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%−95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.

Keywords: optical properties, Si nanowire, transparent thin film transistor, finite-difference time-domain (FDTD) modeling

References(18)

1

Nomura, K.; Ohta, H.; Ueda, K.; Kamiya, T.; Hirano, M.; Hosono, H. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor. Science 2003, 300, 1269–1272.
DOI Google Scholar
2

Someya, T. Optics: Electronic eyeballs. Nature 2008, 454, 703–704.
DOI Google Scholar
3

Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 2004, 432, 488–492.
DOI Google Scholar
4

Cao, Q.; Hur, S. H.; Zhu, Z. T.; Sun, Y.; Wang, C.; Meitl, M. A.; Shim, M.; Rogers, J. A. Highly bendable, transparent thin-film transistors that use carbon-nanotube-based conductors and semiconductors with elastomeric dielectrics. Adv. Mater. 2006, 18, 304–309.
DOI Google Scholar
5

Gorrn, P.; Sander, M.; Meyer, J.; Kroger, M.; Becker, E.; Johannes, H. H.; Kowalsky, W.; Riedl, T. Towards see-through displays: Fully transparent thin-film transistors driving transparent organic light-emitting diodes. Adv. Mater. 2006, 18, 738–741.
DOI Google Scholar
6

Kim, H.; Horwiz, J. S.; Kushto, G. P.; Kafafi, Z. H.; Chrisey, D. B. Indium tin oxide thin films grown on flexible plastic substrates by pulsed-laser deposition for organic light-emitting diodes. Appl. Phys. Lett. 2001, 79, 284–286.
DOI Google Scholar
7

Izaki, M.; Omi, T. Transparent zinc oxide films prepared by electrochemical reaction. Appl. Phys. Lett. 1996, 68, 2439–2440.
DOI Google Scholar
8

Ju, S.; Facchetti, A.; Xuan, Y.; Liu, J.; Ishikawa, F.; Ye, P.; Zhou, C.; Marks, T. J.; Janes, D. B. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nat. Nanotechnol. 2007, 2, 378–384.
DOI Google Scholar
9

Dattoli, E. N.; Wan, Q.; Guo, W.; Chen, Y.; Pan, X.; Lu, W. Fully transparent thin-film transistor devices based on SnO2 nanowires. Nano Lett. 2007, 7, 2463–2469.
DOI Google Scholar
10

Artukovic, E.; Kaempgen, M.; Hecht, D. S.; Roth, S.; Gruner, G. Transparent and flexible carbon nanotube transistors. Nano Lett. 2005, 5, 757–760.
DOI Google Scholar
11

Ishikawa, F. N.; Chang, H. K.; Ryu, K.; Chen, P.; Badmaev, A.; De Arco Gomez, L.; Shen, G.; Zhou, C. Transparent electronics based on transfer printed aligned carbon nanotubes on rigid and flexible substrates. ACS Nano 2008, 3, 73–79.
DOI Google Scholar
12

Patolsky, F.; Zheng, G.; Lieber, C. M. Fabrication of silicon nanowire devices for ultrasensitive, label-free, real-time detection of biological and chemical species. Nat. Protoc. 2006, 1, 1711–1724.
DOI Google Scholar
13

Duan, X.; Niu, C.; Sahi, V.; Chen, J.; Parce, J. W.; Empedocles, S.; Goldman, J. L. High-performance thin-film transistors using semiconductor nanowires and nanoribbons. Nature 2003, 425, 274–278.
DOI Google Scholar
14

Oubre, C.; Nordlander P. Optical properties of metallodielectric nanostructures calculated using the finite difference time domain method. J. Phys. Chem. B 2004, 108, 17740–17747.
DOI Google Scholar
15

Javey, A.; Nam, S. W.; Friedman, R. S.; Yan, H.; Lieber, C. M. Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics. Nano Lett. 2007, 7, 773–777.
DOI Google Scholar
16

Landau, L. D.; Lifshitz, E. M.; Pitaevskii, L. P. Electrodynamics of Continuous Media; Pergamon: Oxford, England, 1984.
DOI
17

Wang, J.; Gudiksen, M. S.; Duan, X.; Cui, Y.; Lieber, C. M. Highly polarized photoluminescence and photo detection from single indium phosphide nanowires. Science 2001, 293, 1455–1457.
DOI Google Scholar
18

Pangal, K.; Sturm, J. C.; Wagner, S. Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon. Appl. Phys. Lett. 1999, 75, 2091–2093.
DOI Google Scholar
Publication history
Copyright
Acknowledgements

Publication history

Received: 11 March 2011
Revised: 12 April 2011
Accepted: 12 April 2011
Published: 14 June 2011
Issue date: September 2011

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011

Acknowledgements

Acknowledgements

This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (No. KRF-2007-331-D00194) and by the National Research Foundation of Korea (NRF) through a Grant (No. K2070400000307, Global Research Laboratory (GRL) Program) provided by the Korean Ministry of Education, Science and Technology (MEST) in 2009.

Return