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Nano Research 2011, 4(5): 440-447 https://doi.org/10.1007/s12274-011-0100-6
Research Article | Issue | Published: 17 February 2011

Selective Growth of ZnO Nanorods on SiO2/Si Substrates Using a Graphene Buffer Layer

Show Author's Information Won Mook Choi1,§,  Kyung-Sik Shin2,§,  Hyo Sug Lee1,  Dukhyun Choi3,  Kihong Kim1,  Hyeon-Jin Shin1,  Seon-Mi Yoon1,  Jae-Young Choi1( ),  Sang-Woo Kim2( )
Samsung Advanced Institute of TechnologyGiheung, YonginGyeonggi446-712Republic of Korea
School of Advanced Materials Science and Engineering, Sungkyunkwan (SKKU) Advanced Institute of Nanotechnology (SAINT)Center for Human Interface Nanotechnology (HINT)Sungkyunkwan University, Suwon440-746Republic of Korea
Department of Mechanical EngineeringKyung Hee University, YonginGyeonggi446-701Republic of Korea

§ These authors contributed equally to this work

Keywords:
Graphene, selective growth, ZnO, heterojunction, nanorod, solution
Cite this article:
Choi WM, Shin K-S, Lee HS, et al. Selective Growth of ZnO Nanorods on SiO2/Si Substrates Using a Graphene Buffer Layer. Nano Research, 2011, 4(5): 440-447. https://doi.org/10.1007/s12274-011-0100-6
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Abstract Full text About this article

A promising strategy for the selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer in a low temperature solution process is described. High densities of ZnO nanorods were grown over a large area and most ZnO nanorods were vertically well-aligned on graphene. Furthermore, selective growth of ZnO nanorods on graphene was realized by applying a simple mechanical treatment, since ZnO nanorods formed on graphene are mechanically stable on an atomic level. These results were confirmed by first principles calculations which showed that the ZnO-graphene binding has a low destabilization energy. In addition, it was found that ZnO nanorods grown on SiO2/Si with a graphene buffer layer have better optical properties than ZnO nanorods grown on bare SiO2/Si. The nanostructured ZnO-graphene materials have promising applications in future flexible electronic and optical devices.


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About this article

Selective Growth of ZnO Nanorods on SiO2/Si Substrates Using a Graphene Buffer Layer

Show Author's information Won Mook Choi1,§, Kyung-Sik Shin2,§, Hyo Sug Lee1, Dukhyun Choi3, Kihong Kim1, Hyeon-Jin Shin1, Seon-Mi Yoon1, Jae-Young Choi1( ), Sang-Woo Kim2( )
Samsung Advanced Institute of TechnologyGiheung, YonginGyeonggi446-712Republic of Korea
School of Advanced Materials Science and Engineering, Sungkyunkwan (SKKU) Advanced Institute of Nanotechnology (SAINT)Center for Human Interface Nanotechnology (HINT)Sungkyunkwan University, Suwon440-746Republic of Korea
Department of Mechanical EngineeringKyung Hee University, YonginGyeonggi446-701Republic of Korea

§ These authors contributed equally to this work

Abstract

A promising strategy for the selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer in a low temperature solution process is described. High densities of ZnO nanorods were grown over a large area and most ZnO nanorods were vertically well-aligned on graphene. Furthermore, selective growth of ZnO nanorods on graphene was realized by applying a simple mechanical treatment, since ZnO nanorods formed on graphene are mechanically stable on an atomic level. These results were confirmed by first principles calculations which showed that the ZnO-graphene binding has a low destabilization energy. In addition, it was found that ZnO nanorods grown on SiO2/Si with a graphene buffer layer have better optical properties than ZnO nanorods grown on bare SiO2/Si. The nanostructured ZnO-graphene materials have promising applications in future flexible electronic and optical devices.

Keywords: Graphene, selective growth, ZnO, heterojunction, nanorod, solution

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Publication history
Copyright
Acknowledgements

Publication history

Received: 18 September 2010
Revised: 14 December 2010
Accepted: 27 December 2010
Published: 17 February 2011
Issue date: May 2011

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011

Acknowledgements

Acknowledgements

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Nos. 2010-0015035 and 2009-0077682) and also by the New and Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 2009T100100614).

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