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01 June 2010
Aligned Graphene Nanoribbons and Crossbars from Unzipped Carbon Nanotubes
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Aligned graphene nanoribbon (GNR) arrays have been made by unzipping of aligned single-walled and few-walled carbon nanotube (CNT) arrays. Nanotube unzipping was achieved by a polymer-protected Ar plasma etching method, and the resulting nanoribbon array can be transferred onto any chosen substrate. Atomic force microscope (AFM) imaging and Raman mapping on the same CNTs before and after unzipping confirmed that ~80% of CNTs were opened up to form single layer sub-10 nm GNRs. Electrical devices made from the GNRs (after annealing in H2 at high temperature) showed on/off current (Ion/Ioff) ratios up to 103 at room temperature, suggesting the semiconducting nature of the narrow GNRs. Novel GNR–GNR and GNR–CNT crossbars were fabricated by transferring GNR arrays across GNR and CNT arrays, respectively. The production of such ordered graphene nanoribbon architectures may allow for large scale integration of GNRs into nanoelectronics or optoelectronics.
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Aligned Graphene Nanoribbons and Crossbars from Unzipped Carbon Nanotubes
)
Abstract
Aligned graphene nanoribbon (GNR) arrays have been made by unzipping of aligned single-walled and few-walled carbon nanotube (CNT) arrays. Nanotube unzipping was achieved by a polymer-protected Ar plasma etching method, and the resulting nanoribbon array can be transferred onto any chosen substrate. Atomic force microscope (AFM) imaging and Raman mapping on the same CNTs before and after unzipping confirmed that ~80% of CNTs were opened up to form single layer sub-10 nm GNRs. Electrical devices made from the GNRs (after annealing in H2 at high temperature) showed on/off current (Ion/Ioff) ratios up to 103 at room temperature, suggesting the semiconducting nature of the narrow GNRs. Novel GNR–GNR and GNR–CNT crossbars were fabricated by transferring GNR arrays across GNR and CNT arrays, respectively. The production of such ordered graphene nanoribbon architectures may allow for large scale integration of GNRs into nanoelectronics or optoelectronics.
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Acknowledgements
This work was supported by MARCO-MSD, Intel, ONR and graphene-MURI.
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