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27 March 2010
Lithography-Free Fabrication of High Quality Substrate-Supported and Freestanding Graphene Devices
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We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V·s).
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Lithography-Free Fabrication of High Quality Substrate-Supported and Freestanding Graphene Devices
)
Abstract
We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V·s).
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Acknowledgements
We thank Feng Miao for trench wafer fabrication and Hsinyin Chiu for useful discussion. This work is supported in part by Semiconductor Research Corporation (SRC), Office of Naval Research (ONR) N00014-09-1- 0724, ONR/Defense Microelectronics Activity (DMEA) H94003-09-2-0901, the U. S. Army Research Laboratory and Army Research Office (ARO)/W911NF-09-1-0333.
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