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Research Article | Open Access

Van Hove Singularities as a Result of Quantum Confinement: The Origin of Intriguing Physical Properties in Pb Thin Films

Yu Jie Sun1,2S. Souma2Wen Juan Li3T. Sato4Xie Gang Zhu1Guang Wang1Xi Chen1Xu Cun Ma3Qi Kun Xue1,2,3Jin Feng Jia1( )T. Takahashi2,4T. Sakurai2
Key Laboratory of Atomic and Nanosciences Department of Physics Tsinghua UniversityBeijing 100084 China
WPI Advanced Institute for Materials Research Tohoku UniversitySendai 980-8577 Japan
Institute of Physics The Chinese Academy of SciencesBeijing 100190 China
Department of Physics Tohoku UniversitySendai 980-8578 Japan
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Abstract

In situ angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS) have been used to study the electronic structure of Pb thin films grown on a Si(111) substrates. The experiments reveal that the electronic structure near the Fermi energy is dominated by a set of m-shaped subbands because of strong quantum confinement in the films, and the tops of the m-shaped subbands form an intriguing ring-like Van Hove singularity. Combined with theoretical calculations, we show that it is the Van Hove singularity that leads to an extremely high density of states near the Fermi energy and the recently reported strong oscillations (with a period of two monolayers) in various properties of Pb films.

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Nano Research
Pages 800-806

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Cite this article:
Sun YJ, Souma S, Li WJ, et al. Van Hove Singularities as a Result of Quantum Confinement: The Origin of Intriguing Physical Properties in Pb Thin Films. Nano Research, 2010, 3(11): 800-806. https://doi.org/10.1007/s12274-010-0047-z

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Received: 13 August 2010
Revised: 14 September 2010
Accepted: 14 September 2010
Published: 12 October 2010
© The Author(s) 2010

This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.