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Research Article Issue
Large-energy-shift photon upconversion in degenerately doped InP nanowires by direct excitation into the electron gas
Nano Research 2013, 6 (10): 752-757
Published: 05 August 2013
Downloads:13

Realizing photon upconversion in nanostructures is important for many next-generation applications such as biological labelling, infrared detectors and solar cells. In particular nanowires are attractive for optoelectronics because they can easily be electrically contacted. Here we demonstrate photon upconversion with a large energy shift in highly n-doped InP nanowires. Crucially, the mechanism responsible for the upconversion in our system does not rely on multi-photon absorption via intermediate states, thus eliminating the need for high photon fluxes to achieve upconversion. The demonstrated upconversion paves the way for utilizing nanowires-with their inherent flexibility such as electrical contactability and the ability to position individual nanowires-for photon upconversion devices also at low photon fluxes, possibly down to the single photon level in optimised structures.

Open Access Research Article Issue
Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy
Nano Research 2011, 4 (2): 159-163
Published: 01 February 2011
Downloads:22

We have investigated individual bulk-like wires of wurtzite InP using photoluminescence, photoluminescence excitation spectroscopy and transmission electron microscopy. Using two different methods we find that the top of the valence band is split, as expected theoretically. This splitting of the valence band is peculiar to wurtzite InP and does not occur in zinc blende InP. We find the energy difference between the two bands to be 40 meV.

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