Nano Research

ISSN 1998-0124 e-ISSN 1998-0000 CN 11-5974/O4
Editors-in-Chief: Yadong Li, Shoushan Fan
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Research Article
A novel approach towards molecular memory device in gate tunable structure of MoS2-graphene
https://doi.org/10.1007/s12274-020-3063-7
Published: 05 January 2021
2021, 14 (1): 177-184
Downloads: 22 | Views: 463 | PDF (668.2 KB)
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