{Reference Type}: Journal Article {Title}: Fabrication and electrical characteristics of flash-sintered SiO2-doped ZnO-Bi2O3-MnO2 varistors {Author}: PENG, Pai; DENG, Yujun; NIU, Jingpeng; SHI, Liyi; MEI, Yunzhu; DU, Sanming; LIU, Juan; Dong, XU {Journal}: Journal of Advanced Ceramics {ISBN/ISSN}: 2226-4108 {Year}: 2020 {Volume}: 9 {Issue}: 6 {Pages}: 683-692 {DOI}: 10.1007/s40145-020-0404-7 {Keywords}: electrical properties {Keywords}: flash sintering {Keywords}: SiO2 additive {Keywords}: ZBMS varistors {Abstract}: The dense ZnO-Bi2O3-MnO2-xSiO2 (ZBMS) varistors for x = 0, 1, 2, 3 wt% were fabricated by flash sintering method under the low temperature of 850 ℃ within 2 min. The sample temperature was estimated by a black body radiation model in the flash sintering process. The crystalline phase assemblage, density, microstructure, and electrical characteristics of the flash-sintered ZBMS varistors with different SiO2-doped content were investigated. According to the XRD analysis, many secondary phases were detected due to the SiO2 doping. Meanwhile, the average grain size decrease with increasing SiO2-doped content. The improved nonlinear characteristics were obtained in SiO2-doped samples, which can be attributed to the ion migration and oxygen absorption induced by the doped SiO2. The flash-sintered ZBMS varistor ceramics for x = 2 wt% exhibited excellent comprehensive electrical properties, with the nonlinear coefficient of 24.5, the threshold voltage and leakage current of 385 V·mm-1 and 11.8 µA, respectively. {URL}: https://www.sciopen.com/article/10.1007/s40145-020-0404-7 {Language}: en