@article{Jia2022, author = {Kaicheng Jia and Ziteng Ma and Wendong Wang and Yongliang Wen and Huanxin Li and Yeshu Zhu and Jiawei Yang and Yuqing Song and Jiaxin Shao and Xiaoting Liu and Qi Lu and Yixuan Zhao and Jianbo Yin and Luzhao Sun and Hailin Peng and Jincan Zhang and Li Lin and Zhongfan Liu}, title = {Toward batch synthesis of high-quality graphene by cold-wall chemical vapor deposition approach}, year = {2022}, journal = {Nano Research}, volume = {15}, number = {11}, pages = {9683-9688}, keywords = {graphene, defects, cold-wall chemical vapor deposition (CVD), electrical performance}, url = {https://www.sciopen.com/article/10.1007/s12274-022-4347-x}, doi = {10.1007/s12274-022-4347-x}, abstract = {Chemical vapor deposition (CVD) has emerged as a promising approach for the controlled growth of graphene films with appealing scalability, controllability, and uniformity. However, the synthesis of high-quality graphene films still suffers from low production capacity and high energy consumption in the conventional hot-wall CVD system. In contrast, owing to the different heating mode, cold-wall CVD (CW-CVD) system exhibits promising potential for the industrial-scale production, but the quality of as-received graphene remains inferior with limited domain size and high defect density. Herein, we demonstrated an efficient method for the batch synthesis of high-quality graphene films with millimeter-sized domains based on CW-CVD system. With reduced defect density and improved properties, the as-received graphene was proven to be promising candidate material for electronics and anti-corrosion application. This study provides a new insight into the quality improvement of graphene derived from CW-CVD system, and paves a new avenue for the industrial production of high-quality graphene films for potential commercial applications.} }