TY - JOUR AU - Jin, Tengyu AU - Gao, Jing AU - Wang, Yanan AU - Zheng, Yue AU - Sun, Shuo AU - Liu, Lei AU - Lin, Ming AU - Chen, Wei PY - 2022 TI - Two-dimensional reconfigurable electronics enabled by asymmetric floating gate JO - Nano Research SN - 1998-0124 SP - 4439 EP - 4447 VL - 15 IS - 5 AB - Reconfigurable devices with customized functionalities hold great potential in addressing the scaling limits of silicon-based field-effect transistors (FETs). The conventional reconfigurable FETs are limited to the applications in logic circuits, and the commonly used multi-gate programming strategies often lead to high power consumption and device complexity. Here, we report a reconfigurable WSe2 optoelectronic device that can function as photodiode, artificial synapse, and 2-bit memory in a single device, enabled by an asymmetric floating gate (AFG) that can continuously program the device into different homojunction modes. The lateral p−n homojunction formed in the AFG device exhibits high-performance self-powered photodetection, with a responsivity over 0.17 A·W−1 and a wide detection spectral range from violet to near-infrared region. The AFG device can also mimic synaptic features of biological synapses and achieve distinct potentiation/depression behaviors under the modulation of both drain-source bias and light illumination. Moreover, when working as a 2-bit memory via the transition between n−n+ and p−n homojunctions, the AFG device shows four distinct conductive states with a high on/off current ratio over 106 and good repeatability. Combining reduced processing complexity and reconfigurable functionalities, the WSe2 AFG devices demonstrate great potential towards high-performance photoelectric interconnected circuits. UR - https://doi.org/10.1007/s12274-022-4070-7 DO - 10.1007/s12274-022-4070-7