@article{Wang2026, 
author = {Si-Bo Wang and Nian-Ke Chen and Bai-Qian Wang and Huan-Ran Ding and Yu-Ting Huang and Jia Sun and Yao-Jie Wang and Wen-Xiong Song and Ming Xu and Xian-Bin Li},
title = {Selector only memory: Mechanism, devices, industrial demonstrations, and challenges},
year = {2026},
journal = {Nano Research},
keywords = {selector only memory, ovonic threshold switching, phase-change memory, amorphous chalcogenide, nonvolatile memory},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94909157},
doi = {10.26599/NR.2026.94909157},
abstract = {Selector-only memory (SOM) has emerged as a promising memory concept for high-density cross-point and three-dimensional vertical X-point (VXP) architectures by integrating selector and storage functions within a nanoscale single active material. In contrast to conventional one-selector-one-resistor (1S1R) cross-point memories, SOM exploits polarity-dependent threshold-voltage (Vth) modulation in amorphous chalcogenide materials, enabling nonvolatile information storage while retaining volatile selector behavior. This review provides a systematic overview of recent advances in SOM. The threshold-switching behavior and microscopic mechanisms of polarity-dependent Vth shift that govern SOM operation are first discussed. Strategies for improving device performance and reliability are then summarized, followed by recent progress in SOM-oriented materials screening and device modeling. Advances in array-level integration and industrial demonstrations are subsequently highlighted. Finally, the key challenges limiting the further development of SOM are discussed, and possible routes toward their resolution are outlined.}
}