@article{ZHAO2025, 
author = {Ke ZHAO and Huaping JIANG and Lei TANG and Xiaohan ZHONG and Yuting XIE and Haowei HU and Nianlei XIAO and Yihan HUANG and Li LIU},
title = {Driving circuit for suppressing threshold voltage drift in silicon carbide MOSFETs},
year = {2025},
journal = {Journal of Chongqing University},
volume = {48},
number = {9},
pages = {50-56},
keywords = {silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET), threshold voltage, gate driver},
url = {https://www.sciopen.com/article/10.11835/j.issn.1000-582X.2024.207},
doi = {10.11835/j.issn.1000-582X.2024.207},
abstract = {Threshold voltage drift in silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) poses a significant challenge to device reliability in practical applications. This paper reviews the characteristics and existing theoretical models of threshold voltage drift in silicon carbide MOSFETs and proposes a novel gate driving method and circuit to mitigate this issue. The proposed circuit differentiates the device’s turn-off dynamic process from the post turn-off gate voltage by introducing an intermediate voltage level, thereby effectively suppressing threshold voltage drift while retaining the benefits of a negative gate turn-off voltage. An experimental platform was constructed to evaluate the proposed driving circuit. Experimental results indicate that, under the specified conditions, the new circuit reduces threshold voltage drift by 37% compared to conventional driving methods.}
}