@article{Song2026, 
author = {Peng Song and Jiequn Sun and Qi Qi and Linxuan Li and Chengze Du and Jijia Guo and Haoyu Wang and Hui Guo and Haitao Yang and Wu Zhou and Lihong Bao and Hong-Jun Gao},
title = {Scalable ultrafast non-volatile two-dimensional floating-gate memory arrays based on Y2O3/HfO2 hybrid dielectrics},
year = {2026},
journal = {Nano Research},
keywords = {two-dimensional materials, floating-gate memory, ultrafast, high-κ dielectric, large-scale integration, optoelectronic memory},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94909113},
doi = {10.26599/NR.2026.94909113},
abstract = {The growing demands of artificial intelligence hardware have exposed a fundamental latency bottleneck in conventional floating-gate memory arrays. Although two-dimensional (2D) floating-gate memories have achievd nanosecond-level operations, their large-scale integration remains hindered by the scalability issues of the commonly used hBN dielectric layer. Here, we demonstrate scalable ultrafast non-volatile floating-gate memory arrays with hybrid Y2O3/HfO2 dielectrics as the tunneling layer, achieving ~60 ns ultrafast programming/erasing speeds, high extinction ratios up to ~10⁹, long-term data retention approaching 105 s, and robust cycling endurance exceeding 1800 cycles with multi-bit storage capabilities. A 5 × 5 memory array shows outstanding uniformity in memory window sizes, on/off ratios, and programmed/erased threshold voltages. Furthermore, the floating‑gate memory devices also demonstrate efficient optical erasure with 1,441 A/W responsivity and 9×10¹⁶ Jones detectivity. The promising uniformity of these memory arrays highlights the potential for larger-scale integration and its scalability for high-density storage and photodetection applications.}
}