@article{Zhang2026, 
author = {Jinna Zhang and Yunzhe Zheng and Jiajie Yu and Jialin Meng and Hao Zhu and Tianyu Wang and Qingqing Sun and Xiaojian Zhu and Yan Cheng and David Wei Zhang and Lin Chen},
title = {Oxygen vacancy migration engineering for CMOS-compatible hafnium-based ferroelectric synaptic devices},
year = {2026},
journal = {Nano Research},
keywords = {zirconium-doped hafnium oxide, interface oxygen vacancy engineering, multi-polarization state regulation, ferroelectric synaptic device},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94909060},
doi = {10.26599/NR.2026.94909060},
abstract = {Hafnium oxide (HfO₂)-based ferroelectric memory devices have emerged as promising CMOS-compatible nonvolatile memories, yet ferroelectric synaptic devices still suffer from polarization-state read-disturb issues and abrupt polarization variations in neuromorphic computing applications. Here, we demonstrate a ferroelectric synaptic device with highly linear and continuously tunable multilevel polarization states as well as improved resistance to read-disturb issues through electrically driven oxygen-vacancy migration in Hf0.5Zr0.5O2 (HZO) devices. Using an oxygen-active indium tin oxide (ITO) electrode, electric-field cycling induces interfacial oxygen-vacancy redistribution, leading to vacancy compensation and interface stabilization. Spectroscopic and nanoscale analyses reveal field-driven redox processes, including Ti³⁺ to Ti⁴⁺ transformation and three-dimensional oxygen-vacancy migration across the interface. This dynamic defect regulation enhances remanent polarization (Pr), increases breakdown strength, and enables robust endurance. Importantly, controlled vacancy migration allows continuous Pr modulation, supporting multilevel analog synaptic behavior with high uniformity and reversibility. Implemented in a 1T1C architecture, the device exhibits a large and linear memory window with excellent retention. These results establish electrically driven oxygen vacancy engineering as an effective post-fabrication strategy for high-reliability ferroelectric synaptic devices.}
}