@article{Chen2026, 
author = {Lulu Chen and Jianfeng Cai and Zongwei Zhang and Minhui Yuan and Ailong Yang and Chenhao Han and Rensheng Zhang and Jiehua Wu and Xiaojian Tan and Guoqiang Liu and Jun Jiang},
title = {Stable high-performance n-type PbTe enabled by lattice engineering for robust thermoelectric modules},
year = {2026},
journal = {Journal of Materiomics},
volume = {12},
number = {3},
keywords = {Average zT, n-type PbTe, Thermoelectric module, High-stability, Ionic migration energy},
url = {https://www.sciopen.com/article/10.1016/j.jmat.2026.101204},
doi = {10.1016/j.jmat.2026.101204},
abstract = {P-type PbTe is one of the most representative high-performance thermoelectric materials, while the conversion efficiency of the fabricated module is limited by the relatively low zT of n-type PbTe. Here, we report the optimization of Cu-doped n-type PbTe by tuning the ionic migration energy, aiming for the high-efficiency and robust modules. It is revealed that the strategy of lattice contraction, achieved by Ge/Se co-doping, preserves the excellent carrier mobility from interstitial Cu and suppresses the unstable transport at high temperature. In the optimized sample of Pb0.94Ge0.06Cu0.02Se0.04Te0.96, a superior average zT (300–823 K) of 1.04 and a high peak zT of 1.45 at 823 K are obtained. A remarkable conversion efficiency of 10.5% at a temperature difference of 500 K is achieved in the fabricated PbTe-based module.}
}