@article{Wu2026, 
author = {Hongdi Wu and Guodong Zhang and Junfeng Zheng and Xubing Lu and Jun-Ming Liu and Guoliang Yuan},
title = {Low read/write voltage and high endurance of the ferroelectric memory with Hf0.5Zr0.5O2 film},
year = {2026},
journal = {Journal of Materiomics},
volume = {12},
number = {3},
keywords = {Ferroelectric memory, Hf0.5Zr0.5O2 film, Low read/write voltage, High endurance},
url = {https://www.sciopen.com/article/10.1016/j.jmat.2026.101175},
doi = {10.1016/j.jmat.2026.101175},
abstract = {Ferroelectric memory destined for automotive and aerospace applications must meet stringent performance requirements. Here, an innovative two-step annealing approach significantly improved the crystallinity of both ferroelectric orthogonal and anti-ferroelectric tetragonal phases, reduced dislocation density, and lowered leakage current of (1 + 5) nm thick Hf0.5Zr0.5O2 (HZO) thin films. Consequently, the HZO film achieved a high remnant polarization (Pr) of 16.2 μC/cm2 and a coercive voltage (Vc) of 0.62 V at a low read/write voltage of 1 V. After 1012 read/write cycles at 25 ℃, the memory cell showed only an 18% reduction in 2Pr, with an extrapolated maximum endurance of 1.32 × 1017 cycles using electric-field accelerated testing. Notably, the memory cells demonstrated over 1010 read/write cycles even at 200 ℃. This work paves the way for the development of ferroelectric memory chips with low power consumption, high durability, ultra-fast read/write speeds, and high-temperature operation.}
}