@article{Luo2026, 
author = {Dekun Luo and Wei Wu and Min Li and Qianqian Luo and Yaoze Li and Ruixing Xue and Xuhong Hu and Dan Huang and JinZhong Zhang and Jianyu Deng and Ruosheng Zeng and Wenhong Sun},
title = {High-current degradation mechanisms in AlGaN deep-ultraviolet LEDs: The role of point defects},
year = {2026},
journal = {Nano Research},
keywords = {reliability, light-emitting diodes, deep ultraviolet, degradation, defect, AlGaN},
url = {https://www.sciopen.com/article/10.26599/NR.2026.94908952},
doi = {10.26599/NR.2026.94908952},
abstract = {High-current reliability remains a key factor hindering the commercialization of AlGaN-based deep-ultraviolet LEDs, primarily due to elusive defect-mediated degradation. Here, we investigate the spatial distribution and nature of defects induced by high current stress in 276 nm AlGaN-based LEDs grown on high-quality AlN. The results demonstrate that the stress-induced defects are generated within the p-type layer and the active region, particularly in areas of current crowding. A combined analysis using capacitance–voltage measurements, deep-level transient spectroscopy, and admittance spectroscopy reveals that p-layer degradation is driven by nitrogen vacancy (VN)-related defects originating from the dehydrogenation of hydrogen-passivated complexes. In the active region, the dominant stress-induced defects are identified as magnesium substituting gallium (MgGa), VN, gallium vacancy (VGa) complexes, and gallium-nitrogen vacancy (VGa-VN) complexes. These defects act as non-radiative recombination centers, enhancing non-radiative recombination and leading to a reduction in optical power. These findings suggest that mitigating hydrogen incorporation and optimizing current spreading are critical to high-current reliability of AlGaN-based deep-ultraviolet LEDs.}
}