@article{LIU2007, 
author = {Jialei LIU and Renrong LIANG and Jing WANG and Yang XU and Jun XU and Zhihong LIU},
title = {Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition},
year = {2007},
journal = {Tsinghua Science and Technology},
volume = {12},
number = {6},
pages = {747-751},
keywords = {pure Ge, SiGe buffer, oxidation, ultrahigh vacuum chemical vapor deposition},
url = {https://www.sciopen.com/article/10.1016/S1007-0214(07)70184-0},
doi = {10.1016/S1007-0214(07)70184-0},
abstract = {The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UHVCVD) SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si (001) substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dislocation density.}
}