@article{WANG2009, 
author = {Liudi WANG and Zhigang ZHANG and Yue ZHAO and Ping MAO and Liyang PAN},
title = {Performance and Reliability of Multilayer Silicon Nanocrystal Nonvolatile Memory},
year = {2009},
journal = {Tsinghua Science and Technology},
volume = {14},
number = {1},
pages = {103-105},
keywords = {nanocrystal, nonvolatile memory, program and erase, endurance},
url = {https://www.sciopen.com/article/10.1016/S1007-0214(09)70014-8},
doi = {10.1016/S1007-0214(09)70014-8},
abstract = {Nonvolatile memories (NVMs) with triple layers of silicon nanocrystals were fabricated with conventional CMOS technology. This paper explores the program/erase performance and reliability of NVMs with three layers of nanocrystals. The results indicate that the nanocrystals in the triple-layer nanocrystal NVM (NCNVM) are difficult to fully charge during the programming process. The programming speed of the triple-layer NCNVMs is quicker than that of single-layer NCNVMs, which means that the second and third layers of nanocrystals in the triple-layer NCNVM affect the charge of the first layer nanocrystals. Reliability tests show that the memory window has little degradation after 1×104 cycles.}
}